BGA3023Y NXP

BGA3023 2 6 + 1.2 GHz 20 dB gain CATV amplifier Rev. 2 25 February 2015 Product data sheet 1. Product profile 1.1 General description The BGA3023 MMIC is a dual wideband amplifier with internal biasing. It is a Medium Power Amplifier (MPA), specifically designed as an output stage for high linearity CATV optical mini- and midi-nodes, operating over a frequency range of 40 MHz to 1200 MHz. The MPA is housed in a lead free 8-pin HSO8 package. 1.2 Features and benefits Internally biased High gain output 1dB compression point of 30 dBm Frequency range of 40 MHz to 1200 MHz 75 input and output impedance High linearity with an IP3 of 46.5 dBm and I can be controlled between O CC(tot) an IP2 of 85 dBm 175 mA and 350 mA O Operating from 5 V to 8 V supply Integrated feedback 1.3 Applications CATV infrastructure network medium power output stage in optical nodes (FTTx), distribution amplifiers, trunk amplifiers and line extenders 1.4 Quick reference data Table 1. Quick reference data T =25 C typical values at V = 8 V Z =Z =75 input and output connected with 1:1 balun, V = 3.3 V or open amb CC S L I(CTRL) (maximum total supply current) 40 MHz f 1200 MHz unless otherwise specified. 1 Symbol Parameter Conditions Min Typ Max Unit V supply voltage RF input AC coupled 7.6 8.0 8.4 V CC I total supply current - 350 - mA CC(tot) T ambient temperature 40 - +85 C amb P output power at 1 dB gain compression - 30 - dBm L(1dB) 1 IP3 output third-order intercept point - 46.5 - dBm O 2 IP2 output second-order intercept point -85 - dBm O 1 Fundamental frequency f = 500 MHz, fundamental frequency f = 501 MHz. The intermodulation product (IM3) is measured at 1 2 2 f f = 499 MHz. The output power of the fundamental frequencies is 10 dBm per frequency. 1 2 2 Fundamental frequency f = 240 MHz, fundamental frequency f = 260 MHz. The intermodulation product (IM2) is measured at 1 2 f +f = 500 MHz. The output power of the fundamental frequencies is 10 dBm per frequency. 1 2BGA3023 NXP Semiconductors 1.2 GHz 20 dB gain CATV amplifier 2. Pinning information 2.1 Pinning B,1 03 B287 03 703B6(16 9 && %* %* %* &75/ 9 && 03%B,1 03%B287 DDD Fig 1. Pin configuration for SOT786-2 2.2 Pin description Table 2. Pin description Symbol Pin Description AMPA IN 1 input amplifier A TMP SENS 2 temperature sense CTRL 3 total supply current control AMPB IN 4 input amplifier B 1 AMPB OUT 5 output amplifier B 1 V 6 supply CC 1 V 7 supply CC 1 AMPA OUT 8 output amplifier A 2 GND exposed die pad ground 1 See Figure 2 for correct connection. 2 The center metal base of the HSO8 also functions as heatsink for the power amplifier. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGA3023 HSO8 plastic thermal enhanced small outline package SOT786-2 8 leads body width 3.9 mm exposed die pad BGA3023 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 2 25 February 2015 2 of 14