Product Information

BGM1013,115

BGM1013,115 electronic component of NXP

Datasheet
RF Wireless Misc MMAMPLIFIER SOT-363

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 3000
Multiples : 1
3000 : USD 0.2001
N/A

Obsolete
0 - Global Stock

MOQ : 3000
Multiples : 3000
3000 : USD 0.1768
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 0.9699
10 : USD 0.766
100 : USD 0.2686
1000 : USD 0.2218
3000 : USD 0.2189
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Supply Voltage - Max
Supply Current
Operating Temperature Range
Package / Case
Packaging
Operating Supply Current
Type
Brand
Mounting Style
Factory Pack Quantity :
Cnhts
Hts Code
Maximum Operating Temperature
Minimum Operating Temperature
Mxhts
Product Type
Subcategory
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BGM1013 MMIC wideband amplifier Rev. 5 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Internally matched to 50 Good output match to 75 Very high gain 35.5 dB at 1 GHz Upper corner frequency at 2.1 GHz 31 dB flat gain up to 2.2 GHz application 14 dBm saturated output power at 1 GHz High linearity (23 dBm IP3 and 43 dBc IM2) out 40 dB isolation. 1.3 Applications Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers Cable systems General purpose. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DC supply voltage RF input AC coupled - 5 6 V S I DC supply current 23 27.5 33 mA S 2 s insertion power gain f = 1 GHz 34.5 35.5 36.2 dB 21 NF noise figure f = 1 GHz - 4.6 4.7 dB P saturated load power f = 1 GHz 13.0 14.0 - dBm L(sat)BGM1013 NXP Semiconductors MMIC wideband amplifier) 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1V S 6 5 4 1 2, 5 GND2 3RF OUT 6 3 4 GND1 132 4 2, 5 6RF IN sym062 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGM1013 SC-88 plastic surface mounted package 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code BGM1013 C4- 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V DC supply voltage RF input AC coupled - 6 V S I DC supply current - 35 mA S P total power dissipation T 90 C - 200 mW tot sp T storage temperature 65 +150 C stg T junction temperature - 150 C j P maximum drive power - 10 dBm D BGM1013 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 19 September 2011 2 of 15

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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