BGU8051 Low noise high linearity amplifier Rev. 7 8 June 2017 Product data sheet COMPANY PUBLIC 1 General description The BGU8051 is, also known as the BTS1001L, a low noise high linearity amplifier for wireless infrastructure applications, equipped with fast shutdown to support TDD systems. The LNA has a high input and output return loss and is designed to operate between 0.3 GHz and 1.5 GHz. It is housed in a 2 mm 2 mm 0.75 mm 8-terminal plastic thin small outline package. The LNA is ESD protected on all terminals. 2 Features and benefits Low noise performance: NF = 0.43 dB High linearity performance: IP3 = 39 dBm O High input return loss > 15 dB High output return loss > 20 dB Unconditionally stable Programmable bias current (via resistor) Small 8-terminal leadless package 2 mm 2 mm 0.75 mm ESD protection on all terminals Moisture sensitivity level 1 Fast shut down to support TDD systems 3 V to 5 V single supply 3 Applications Wireless infrastructure Low noise and high linearity applications LTE, W-CDMA, CDMA, GSM General-purpose wireless applications TDD or FDD systems Suitable for small cells HWSON8NXP Semiconductors BGU8051 Low noise high linearity amplifier 4 Quick reference data Table 1.Quick reference data f = 900 MHz, V = 5 V, T = 25 C, input and output 50 R = 5.1 k unless otherwise specified. All RF parameters CC amb bias are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 900 MHz. Symbol Parameter Conditions Min Typ Max Unit I supply current on state 36 48 60 mA CC off state - 2.8 - mA G associated gain on state 17 18.3 20 dB ass off state - -21 - dB NF noise figure - 0.43 0.63 dB P output power at 1 dB gain compression - 19 - dBm L(1dB) IP3 output third-order intercept point 2-tone tone spacing = 1 MHz P = 35 39 - dBm O i -15 dBm per tone 5 Ordering information Table 2.Ordering information Type number Package Name Description Version BGU8051 HWSON8 plastic thermal enhanced very very thin small outline package no SOT1327-1 leads 8 terminals body 2 2 0.75 mm 6 Block diagram V n.c. BIAS BIAS RF RF IN OUT n.c. SHDN i.c. i.c. aaa-021372 Figure 1.Block diagram BGU8051 All information provided in this document is subject to legal disclaimers. NXP B.V. 2017. All rights reserved. Product data sheet Rev. 7 8 June 2017 COMPANY PUBLIC 2 / 16