Product Information

BGU8052X

BGU8052X electronic component of NXP

Datasheet
NXP Semiconductors RF Amplifier Low noise high linearity amplifier
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7187 ea
Line Total: USD 2.72

1769 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

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1230 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 2.346
10 : USD 2.139
100 : USD 1.7595
250 : USD 1.656
500 : USD 1.4835
1000 : USD 1.2765
2000 : USD 1.219
4000 : USD 1.219
10000 : USD 1.173

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Additional Infomation About Product

BGU8052 Low noise high linearity amplifier Rev. 6 8 June 2017 Product data sheet COMPANY PUBLIC 1 General description The BGU8052 is, also known as the BGTS1001M, a low noise high linearity amplifier for wireless infrastructure applications, equipped with fast shutdown to support TDD systems. The LNA has a high input and output return loss and is designed to operate between 1.5 GHz and 2.5 GHz. It is housed in a 2 mm 2 mm 0.75 mm 8-terminal plastic thin small outline package. The LNA is ESD protected on all terminals. 2 Features and benefits Low noise performance: NF = 0.50 dB High linearity performance: IP3 = 36 dBm O High input return loss > 15 dB High output return loss > 20 dB Unconditionally stable up to 20 GHz Programmable bias current (via resistor) Small 8-terminal leadless package 2 mm 2 mm 0.75 mm ESD protection on all terminals Moisture sensitivity level 1 Fast shut down to support TDD systems 3 V to 5 V single supply 3 Applications Wireless infrastructure Low noise and high linearity applications LTE, W-CDMA, CDMA, GSM General-purpose wireless applications TDD or FDD systems Suitable for small cells HWSON8NXP Semiconductors BGU8052 Low noise high linearity amplifier 4 Quick reference data Table 1.Quick reference data f = 1900 MHz V = 5 V T = 25 C input and output 50 R = 5.1 k unless otherwise specified. All RF parameters CC amb bias are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 1900 MHz. Symbol Parameter Conditions Min Typ Max Unit I supply current on state 36 48 60 mA CC off state - 2.8 - mA G associated gain on state 17 18.5 20 dB ass off state - -23 - dB 1 NF noise figure - 0.50 0.70 dB P output power at 1 dB gain compression - 18 - dBm L(1dB) IP3 output third-order intercept point 2-tone tone spacing = 1 MHz P = 32 36 - dBm O i -15 dBm per tone 1 Connector and Printed-Circuit Board (PCB) losses have been de-embedded. 5 Ordering information Table 2.Ordering information Type number Package Name Description Version BGU8052 HWSON8 plastic thermal enhanced very very thin small outline package no SOT1327-1 leads 8 terminals body 2 2 0.75 mm 6 Block diagram V n.c. BIAS BIAS RF RF IN OUT n.c. SHDN i.c. i.c. aaa-021372 Figure 1.Block diagram BGU8052 All information provided in this document is subject to legal disclaimers. NXP B.V. 2017. All rights reserved. Product data sheet Rev. 6 8 June 2017 COMPANY PUBLIC 2 / 16

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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