BLF6G10-45,112 NXP

BLF6G10-45 Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f V P G ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 920 to 960 28 1.0 22.5 7.8 48.5 1 Test signal: 3GPP test model 1 64 DPCH PAR = 7.5 dB at 0.01 % probability on CCDF per carrier carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an I of 350 mA: Dq Average output power = 1.0 W Gain = 22.5 dB Efficiency = 7.8 % ACPR = 48.5 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)BLF6G10-45 Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1drain 1 1 2gate 1 3source 2 3 3 2 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G10-45 - flanged ceramic package 2 mounting holes 2 leads SOT608A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 13 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction T =80 C 1.7 K/W th(j-case) case to case P = 12.5 W L BLF6G10-45 4 All information provided in this document is subject to legal disclaimers. Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 12