BSS84/NXP NXP

BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 16 December 2008 Product data sheet 1. Product prole 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview [1] Type number Package NXP JEDEC BSS84 SOT23 TO-236AB BSS84/DG [1] /DG: halogen-free 1.2 Features n Low threshold voltage n Direct interface to CMOS and Transistor-Transistor Logic (TTL) n High-speed switching n No secondary breakdown 1.3 Applications n Line current interrupter in telephone sets n Relay, high-speed and line transformer drivers 1.4 Quick reference data n V - 50 V n I - 130 mA DS D n R 10 n P 250 mW DSon totBSS84 NXP Semiconductors P-channel enhancement mode vertical DMOS transistor 2. Pinning information Table 2. Pinning Pin Symbol Description Simplied outline Graphic symbol 1 G gate 3 D 2 S source 3 D drain 12 G SOT23 (TO-236AB) S 001aaa025 3. Ordering information Table 3. Ordering information [1] Type number Package Name Description Version BSS84 TO-236AB plastic surface-mounted package; 3 leads SOT23 BSS84/DG [1] /DG: halogen-free 4. Marking Table 4. Marking codes [1] [2] Type number Marking code BSS84 13* BSS84/DG ZV* [1] /DG: halogen-free [2] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BSS84_6 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 06 16 December 2008 2 of 11