Product Information

BT134W-600,115

BT134W-600,115 electronic component of NXP

Datasheet
Triacs Thyristor TRIAC 600V 11A 4-Pin (3+Tab)

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7673 ea
Line Total: USD 0.77

9699 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7727 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.5517
10 : USD 0.4058
100 : USD 0.3156
500 : USD 0.2634
1000 : USD 0.2207
2000 : USD 0.1922
10000 : USD 0.1815
25000 : USD 0.1768
50000 : USD 0.1768

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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BT134W-600E 4Q Triac 14 June 2016 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT223 surface-mountable plastic package. This sensitive gateseries triac is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits Direct interfacing to logic level ICs Direct interfacing to low power gate drivers and microcontrollers High blocking voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate Surface-mountable package Triggering in all four quadrants 3. Applications General purpose low power motor control General purpose switching and phase control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 108 C Fig. 1 - - 1 A T(RMS) sp Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 10 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 11 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 2.5 10 mA GT D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2+ G- - 4 10 mA D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2- G- - 5 10 mA D T T = 25 C Fig. 9 jWeEn Semiconductors BT134W-600E 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G+ - 11 25 mA D T T = 25 C Fig. 9 j I holding current V = 12 V T = 25 C Fig. 11 - 2.2 15 mA H D j V on-state voltage I = 2 A T = 25 C Fig. 12 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% - 30 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 4 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate 1 2 3 4 T2 main terminal 2 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT134W-600E SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code BT134W-600E BT134W-6E BT134W-600E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 14 June 2016 2 / 16

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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