Product Information

BTA212B-800B,118

BTA212B-800B,118 electronic component of NXP

Datasheet
NXP Semiconductors Triacs TAPE13 3Q TRIAC
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5600: USD 0.7311 ea
Line Total: USD 4094.16

0 - Global Stock
MOQ: 5600  Multiples: 5600
Pack Size: 5600

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 5600
Multiples : 5600
5600 : USD 0.6279
9600 : USD 0.6037

Read More Specifications

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Packaging
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
On State Rms Current It Rms
Factory Pack Quantity :
Rohs Mouser
Off-State Leakage Current Vdrm Idrm
Cnhts
Hts Code
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DDATA SHEET BTA212B series B Three quadrant triacs high commutation September 2019 Product specificationWeEn Semiconductors Product specification Three quadrant triacs BTA212B series B high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Planar passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope suitable for surface mounting intended for use in BTA212B- 500B 600B 800B circuits where high static and dynamic V Repetitive peak off-state 500 600 800 V DRM dV/dt and high dI/dt can occur. These voltages devices will commutate the full rated I RMS on-state current 12 12 12 A T(RMS) rms current at the maximum rated I Non-repetitive peak on-state 95 95 95 A TSM junction temperature, without the aid of current a snubber. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION mb 1 main terminal 1 T2 T1 2 main terminal 2 G sym051 3 gate 2 1 3 mb main terminal 2 D2PAK (SOT404) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 1 1 V Repetitive peak off-state - 500 600 800 V DRM voltages I RMS on-state current full sine wave - 12 A T(RMS) T 99 C mb I Non-repetitive peak full sine wave TSM on-state current T = 25 C prior to j surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A 100 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms - 0.5 W G(AV) period T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. 1 September 2019 Rev 1.300

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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