BTA212B-800B,118 NXP

DISCRETE SEMICONDUCTORS DDATA SHEET BTA212B series B Three quadrant triacs high commutation September 2019 Product specificationWeEn Semiconductors Product specification Three quadrant triacs BTA212B series B high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Planar passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope suitable for surface mounting intended for use in BTA212B- 500B 600B 800B circuits where high static and dynamic V Repetitive peak off-state 500 600 800 V DRM dV/dt and high dI/dt can occur. These voltages devices will commutate the full rated I RMS on-state current 12 12 12 A T(RMS) rms current at the maximum rated I Non-repetitive peak on-state 95 95 95 A TSM junction temperature, without the aid of current a snubber. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION mb 1 main terminal 1 T2 T1 2 main terminal 2 G sym051 3 gate 2 1 3 mb main terminal 2 D2PAK (SOT404) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 1 1 V Repetitive peak off-state - 500 600 800 V DRM voltages I RMS on-state current full sine wave - 12 A T(RMS) T 99 C mb I Non-repetitive peak full sine wave TSM on-state current T = 25 C prior to j surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A 100 A/s T TM G on-state current after dI /dt = 0.2 A/s G triggering I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms - 0.5 W G(AV) period T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. 1 September 2019 Rev 1.300