BYC10-600,127

BYC10-600 Hyperfast power diode 27 May 2013 Product data sheet 1. General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package 2. Features and benefits Extremely fast switching Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 600 V RRM voltage I average forward = 0.5 T 78 C square-wave - - 10 A F(AV) mb current pulse Fig. 1 Fig. 2 Static characteristics V forward voltage I = 10 A T = 150 C Fig. 4 - 1.4 1.8 V F F j Dynamic characteristics t reverse recovery time I = 10 A V = 400 V dI /dt = 500 A/ - 19 - ns rr F R F s T = 25 C Fig. 6 j Scan or click this QR code to view the latest information for this product TO-220ACNXP Semiconductors BYC10-600 Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 001aaa020 2 A anode mb mb mounting base connected to cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC10-600 TO-220AC plastic single-ended package heatsink mounted 1 mounting SOD59 hole 2-lead TO-220AC 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage T 114 C - 500 V R mb I average forward current = 0.5 T 78 C square-wave - 10 A F(AV) mb pulse Fig. 1 Fig. 2 I repetitive peak forward current = 0.5 T 78 C square-wave - 20 A FRM mb pulse I non-repetitive peak forward t = 10 ms T = 25 C sine-wave - 65 A FSM p j(init) current pulse t = 8.3 ms T = 25 C sine-wave - 71 A p j(init) pulse T storage temperature -40 150 C stg T junction temperature - 150 C j BYC10-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 27 May 2013 2 / 9