BYT79-500,127 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BYT79-500 Rectifier diodes ultrafast Product specification March 2019WeEn Semiconductors Product specification Rectifier diodes BYT79-500 ultrafast FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop V = 500 V R Fast switching K A Soft recovery characteristic V 1.05 V F 001aaa020 High thermal cycling performance Low thermal resistance I = 14 A F(AV) t 60 ns rr GENERAL DESCRIPTION PINNING SOD59 (TO220AC) mb Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYT79 series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. 1 2 TO-220AC (SOD59) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Peak repetitive reverse voltage - V 500 RRM V Continuous reverse voltage T 147C - V 500 R mb 1 I Average forward current square wave = 0.5 - 14 A F(AV) T 117 C mb I Non-repetitive peak forward t = 10 ms - A FSM current. t = 8.3 ms - A 130 sinusoidal with reapplied 143 V RRM(max) T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R Thermal resistance junction to - - 2.0 K/W th j-mb mounting base R Thermal resistance junction to in free air. - 60 - K/W th j-a ambient 1 Neglecting switching and reverse current losses March 2019 1 Rev 1.500