Product Information

BYV29-400

BYV29-400 electronic component of NXP

Datasheet
DIODE, ULTRAFAST, 9A
Fast switching silicon rectifier diode for low voltage applications.
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.9767 ea
Line Total: USD 4.88

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1
5 : USD 0.9951
25 : USD 0.7888
100 : USD 0.6184
250 : USD 0.5528
500 : USD 0.4862
1000 : USD 0.4348

Read More Specifications

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No. Of Pins
Product Range
Svhc
Current If @ Vf
Current Ifsm
Current Ir Max
Diode Type
Junction Temperature Tj Max
Pin Configuration
Reverse Recovery Time Trr Typ
Termination Type
LoadingGif

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Additional Infomation About Product

The BYV29-400 is a power N-channel enhancing mode MOSFET, manufactured by NXP Semiconductor. The device has an exceptionally low on-resistance and is capable of delivering up to 400V of drain-source breakdown voltage. This low level of on-resistance makes the BYV29-400 capable of delivering up to 4A of continuous current. The device is suitable for applications such as switched-mode power supplies, inverters, and adjustable voltage sources.

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