Product Information

BYV72EW-200,127

BYV72EW-200,127 electronic component of NXP

Datasheet
Rectifiers Dual ultrafast power diode
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9103 ea
Line Total: USD 1.91

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 30
Multiples : 30
30 : USD 1.1053
510 : USD 0.9861

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.9103
10 : USD 1.5543
100 : USD 1.1296
600 : USD 0.9789
1200 : USD 0.9456
3000 : USD 0.9089
5400 : USD 0.8946

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BYV72EW-200 Dual ultrafast power diode 26 September 2018 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package. 2. Features and benefits Very low on-state loss Fast switching Soft recovery characteristic minimizes power consuming oscillations High reverse surge capability High thermal cycling performance Low thermal resistance 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 200 V R I average forward = 0.5 T 113 C square-wave - - 15 A F(AV) mb current pulse per diode Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 170 A FSM p j(init) forward current pulse per diode Fig. 4 t = 8.3 ms T = 25 C sine-wave - - 185 A p j(init) pulse per diode Static characteristics V forward voltage I = 15 A T = 25 C Fig. 6 - 0.95 1.05 V F F j I = 30 A T = 25 C Fig. 6 - 1 1.2 V F j I = 15 A T = 150 C Fig. 6 - 0.78 0.9 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 28 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYV72EW-200 Dual ultrafast power diode 4. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb K mounting base cathode 1 2 3 TO-247 (SOT429) 5. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV72EW-200 TO-247 plastic single-ended through-hole package heatsink mounted 1 SOT429 mounting hole 3 lead TO-247 BYV72EW-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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