BZV55-C12 NXP

BZV55 series Voltage regulator diodes Rev. 5 26 January 2011 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 1.2 Features and benefits Non-repetitive peak reverse power Wide working voltage range: dissipation: 40 W nominal 2.4 V to 75 V (E24 range) Total power dissipation: 500 mW Low differential resistance Two tolerance series: 2%and 5% Small hermetically sealed glass SMD package 1.3 Applications General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit forward voltage I =10mA - - 0.9 V V F F [1] non-repetitive peak -- 40 W P ZSM reverse power dissipation [1] t =100 s; square wave; T =25 C prior to surge p j 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol [1] 1 cathode 2 anode ka 1 2 006aaa152 [1] The marking band indicates the cathode.BZV55 series NXP Semiconductors Voltage regulator diodes 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BZV55-B2V4 to - hermetically sealed glass surface-mounted SOD80C [1] BZV55-C75 package; 2 connectors [1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code BZV55-B2V4 to BZV55-C75 marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I forward current - 250 mA F [1] I non-repetitive peak -see ZSM reverse current Table 8 and 9 [1] P non-repetitive peak -40 W ZSM reverse power dissipation [2] P total power dissipation T 50 C -400 mW tot amb [2] T 50 C -500 mW tp T storage temperature 65 +200 C stg T junction temperature 65 +200 C j [1] t =100 s; square wave; T =25 C prior to surge p j [2] Device mounted on a ceramic substrate of 10 10 0.6 mm. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] R thermal resistance from in free air - - 380 K/W th(j-a) junction to ambient R thermal resistance from - - 300 K/W th(j-sp) junction to solder point [1] Device mounted on a ceramic substrate of 10 10 0.6 mm. BZV55_SER All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 26 January 2011 2 of 13