KIT912J637EVME

NXP Semiconductors Document Number: MM912 637D1 Rev. 6.0, 6/2021 Data sheet: Technical data Intelligent integrated precision MM912 637 battery sensor The MM912I637 (96 kB) and MM912J637 (128 kB) are fully integrated LIN Battery monitoring devices, based on NXP SMARTMOS and S12 MCU Battery Monitoring System Technology. The device supports precise current measurement via an external shunt resistor, and precise battery voltage measurement via a series resistor directly at the battery plus pole. The integrated temperature sensor combined in the close proximity to the battery, allows battery temperature measurement. The integrated LIN 2.1 interface makes the sensor feedback available on the LIN Bus. Features Battery voltage measurement Battery current measurement in up to 8 ranges EP SUFFIX (WF-TYPE) EP SUFFIX (WF-TYPE) On chip temperature measurement SOT619-16 SOT619-25(D) Normal and two low-power modes 48-PIN QFN 48-PIN QFN Current threshold detection and current averaging in standby => wake-up from low-power mode Applications Triggered wake-up from LIN and periodic wake-up 12 V Lead-acid battery monitoring Signal low pass filtering (current, voltage) PGA (programmable low-noise gain amplifier) with automatic gain control Accurate internal oscillator (an external quartz oscillator may be used for extended accuracy) Communication via a LIN 2.1, LIN2.0 bus interface S12 microcontroller with 128 kByte flash, 6.0 kByte RAM, 4.0 kByte data flash Background debug module External temperature sensor option (TSUP, VTEMP) Optional 2nd external voltage sense input (VOPT) 4 x 5.0 V GPIO including one wake-up capable high voltage input (PTB3/L0) 8 x MCU general purpose I/O including SPI functionality Industry standard EMC compliance MM912 637 VDDA LIN (optional) ADC Supply LIN Interface AGND LGND ADCGND Internal VDDL TSUP Optional Temp Sense Temp 2.5 V Supply VDDH VTEMP Input and Supply Sense Battery VDDD2D Module Positive Pole VOPT VDDX 5.0 V Supply VSENSE + Voltage sense Module VDDRX DGND VSUP Power Supply Digital Ground VSSD2D Battery VSSRX Negative Pole ISENSEL RESET Reset RESET A Current Sense Module Shunt PA0/MISO PA1/MOSI ISENSEH Chassis PA2/SCK Ground PTB0 PA3/SS -5.0 V GPI/O shared 5.0 V Digital I/O PTB1 PA4 with TIMER, SCI and LIN PA5 PTB2 -PTB3 high voltage PA6 WAKE capable PTB3/L0 PA7 4 BKGD/MODC GNDSUB Debug and External PE0/EXTAL Oscillator TCLK PE1/XTAL Analog Test MCU Test TEST TEST A Figure 1. Simplified application diagram NXP B.V. 2021. All rights reserved.NXP Semiconductors MM912 637 Intelligent integrated precision battery sensor Table of Contents 1 Ordering information . 3 2 Pin assignment . 5 2.1 MM912 637 pin description . 5 2.2 Recommended external components . 8 2.3 Pin structure . 9 3 Electrical characteristics . 11 3.1 General . 11 3.2 Absolute maximum ratings 11 3.3 Operating conditions . 12 3.4 Supply currents . 13 3.5 Static electrical characteristics 15 3.6 Dynamic electrical characteristics . 20 3.7 Thermal protection characteristics . 33 3.8 Electromagnetic compatibility (EMC) . 33 4 Functional description and application information 34 4.1 Introduction 34 4.2 MM912 637 - analog die overview 56 4.3 Analog die - power, clock and resets - PCR . 59 4.4 Interrupt module - IRQ 82 4.5 Current measurement - ISENSE 89 4.6 Voltage measurement - VSENSE . 90 4.7 Temperature measurement - TSENSE . 91 4.8 Channel acquisition 92 4.9 Window watchdog 135 4.10 Basic timer module - TIM (TIM16B4C) 139 4.11 General purpose I/O - GPIO 153 4.12 LIN 164 4.13 Serial communication interface (S08SCIV4) 170 4.14 Life time counter (LTC) 184 4.15 Die to die interface - target . 187 4.16 Embedded microcontroller - overview . 188 4.17 MCU - port integration module (9S12I128PIMV1) 197 4.18 MCU - interrupt module (S12S9S12I128PIMV1V1) . 205 4.19 Memory map control (S12PMMCV1) 209 4.20 MCU - debug module (9S12I128PIMV1) . 221 4.21 MCU - security (S12XS9S12I128PIMV1V2) 254 4.22 Background debug module (9S12I128PIMV1) 257 4.23 S12 clock, reset, and power management unit (9S12I128PIMV1) . 273 4.24 MCU - serial peripheral interface (S129S12I128PIMV1V5) . 304 4.25 128 kByte flash module (S12FTMRC128K1V1) . 323 4.26 MCU - die-to-die initiator (9S12I128PIMV1) 361 5 MM912 637 - trimming 373 5.1 Introduction . 373 5.2 IFR trimming content and location 373 5.3 Memory map and registers . 377 6 Packaging . 383 6.1 Package dimensions 383 7 Revision history 390 MM912 637D1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2021. All rights reserved. Data sheet: Technical data Rev. 6.0 6/2021 2/396