DocumentNumber:MHT2012N NXPSemiconductors Rev. 0, 07/2018 TechnicalData RFLDMOSIntegratedPower Amplifier MHT2012N This12.5WCWRFpowerintegratedcircuitisdesignedforRFenergy applications operatinginthe2450MHz ISM band. TypicalPerformance: V =28Vdc,P =11dBm,I =15mA,I =75mA DD in DQ1 DQ2 24002500MHz,12.5WCW,28V Frequency Signal G PAE P ps out RFLDMOSINTEGRATED (MHz) Type (dB) (%) (W) POWERAMPLIFIER 2400 CW 30.1 51.3 13.0 2450 30.0 51.4 12.7 2500 29.7 50.5 11.7 Features PQFN8 8 Highgainsimplifies layout andreducedPCB areacomparedtoa PLASTIC discretedesign Qualifieduptoamaximum of 32V operation DD On--chipinput andinterstagematching(50ohm input) Integratedquiescent current temperaturecompensationwith (1) enable/disablefunction IntegratedESD protection 150C caseandjunctiontemperaturerating Idealas adriver for highpower RF energy applications TypicalApplications Driver for consumer andcommercialcookingapplications Driver for industrialheatingapplications, suchas sterilization, pasteurization, drying, moisture--levelingprocess, curingandwelding Driver for medicalapplications, suchas microwaveablation, renaldenervationanddiathermy Finalstagefor portableheatingdevices andportablemedicalsystems V V GS1 GS2 24 23 22 21 20 19 N.C. 1 18 N.C. QuiescentCurrent 17 N.C. N.C. 2 (1) TemperatureCompensation 3 16 RF /V RF in out DS2 15 RF /V RF 4 out DS2 in N.C. 5 14 N.C. 13 N.C. 6 N.C. RF RF /V in 78 9101112 out DS2 V DS1 Note: Exposed backside of the package is thesourceterminalforthetransistor. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamily,andtoAN1987,QuiescentCurrentControl for the RF Integrated Circuit Device Family. GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 0.5,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J InputPower P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature81C,12.5W,2450MHz Stage1,28Vdc,I =12mA 14 DQ1 Stage2,28Vdc,I =72mA 4.3 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJS--001--2017) 1B,passes 500V ChargeDeviceModel(perJS--002--2014) C3,passes 1000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit Stage1 -- OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 500 nAdc DSS (V =32Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 200 nAdc GSS (V =0.9Vdc,V =0Vdc) GS DS Stage1 -- OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =3 Adc) DS D (4) Fixture Gate Quiescent Voltage V 4.9 Vdc GG(Q) (V =28Vdc,I =12mAdc) DS DQ1 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat