Product Information

MMBZ20VCL

MMBZ20VCL electronic component of NXP

Datasheet
DIODE, DUAL TVS, UN, 40W, 17V, SOT23

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1723 ea
Line Total: USD 0.86

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1
5 : USD 0.1723
100 : USD 0.0811
500 : USD 0.068
1000 : USD 0.0475

     
Manufacturer
Product Category
Operating Voltage
Brand
Clamping Voltage Vc Max
Diode Case Style
No. Of Pins
Power Dissipation Pd
Product Range
Svhc
Breakdown Voltage Max
Breakdown Voltage Min
Breakdown Voltage Range
Diode Configuration
Peak Pulse Current Ippm
Reverse Stand-Off Voltage Vrwm
Tvs Polarity
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MMBZxVCL MMBZxVDL series Double ESD protection diodes for transient overvoltage suppression Rev. 01 3 September 2008 Product data sheet 1. Product prole 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common cathode conguration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview 1 Type number Package Conguration NXP JEDEC MMBZ12VDL SOT23 TO-236AB dual common cathode MMBZ15VDL MMBZ18VCL MMBZ20VCL MMBZ27VCL MMBZ33VCL 1 All types available as /DG halogen-free version. 1.2 Features n Unidirectional ESD protection of n ESD protection up to 30 kV (contact two lines discharge) n Bidirectional ESD protection of one line n IEC 61000-4-2 level 4 (ESD) n Low diode capacitance: C 140 pF n IEC 61643-321 d n Rated peak pulse power: P 40 W n AEC-Q101 qualied PPM n Ultra low leakage current: I 5nA RM 1.3 Applications n Computers and peripherals n Automotive electronic control units n Audio and video equipment n Portable electronics n Cellular handsets and accessoriesMMBZxVCL MMBZxVDL series NXP Semiconductors Double ESD protection diodes for transient overvoltage suppression 1.4 Quick reference data Table 2. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM MMBZ12VDL - - 8.5 V MMBZ12VDL/DG MMBZ15VDL - - 12.8 V MMBZ15VDL/DG MMBZ18VCL - - 14.5 V MMBZ18VCL/DG MMBZ20VCL --17 V MMBZ20VCL/DG MMBZ27VCL --22 V MMBZ27VCL/DG MMBZ33VCL --26 V MMBZ33VCL/DG C diode capacitance f = 1 MHz V =0V d R MMBZ12VDL - 110 140 pF MMBZ12VDL/DG MMBZ15VDL - 85 105 pF MMBZ15VDL/DG MMBZ18VCL - 7090pF MMBZ18VCL/DG MMBZ20VCL - 6580pF MMBZ20VCL/DG MMBZ27VCL - 4860pF MMBZ27VCL/DG MMBZ33VCL - 4555pF MMBZ33VCL/DG 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 anode (diode 1) 3 3 2 anode (diode 2) 3 common cathode 12 12 006aaa150 MMBZXVCL MMBZXVDL SER 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 3 September 2008 2 of 15

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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