Product Information

MMBZ27VA-TR

MMBZ27VA-TR electronic component of NXP

Datasheet
ESD Suppressors / TVS Diodes MMBZ27VA-T/SOT23/TO-236AB

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5757 ea
Line Total: USD 0.58

7643 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3050 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.2139
10 : USD 0.192
100 : USD 0.1046
1000 : USD 0.0449
3000 : USD 0.0368
9000 : USD 0.0299
24000 : USD 0.0276
45000 : USD 0.0265

     
Manufacturer
Product Category
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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MMBZ27VA-T TVS device for surge protection of interface and supply lines 5 May 2021 Product data sheet 1. General description ESD protection device in a small SOT23 Surface-Mounted Device (SMD) plastic package designed to protect two lines from the damage caused by transient overvoltages (TVS). 2. Features and benefits Reverse stand-off voltage: V = 22 V RWM Low clamping voltage: V = 55 V max at I = 4.2 A CL PP ESD protection up to 30 kV (IEC 61000-4-2) Ultra low leakage current: I < 1 nA RM Qualified according to AEC-Q101 3. Applications ESD protection for supply and interface lines with high signal levels. Industrial Consumer Computing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 22 V RWM amb voltage I rated peak pulse t = 8/20 s 1 2 - - 4.2 A PPM p current t = 10/1000 s 3 2 - - 0.61 A p V clamping voltage I = 4.2 A t = 8/20 s T = 25 C 1 2 - 46 55 V CL PPM p amb 1 Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 Measured from pin 1 or pin 2 to pin 3. 3 In accordance with IEC 61643-321 (10/1000 s current waveform).Nexperia MMBZ27VA-T TVS device for surge protection of interface and supply lines 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 C1 cathode (diode 1) 3 2 C2 cathode (diode 2) 3 CA common anode 1 2 1 2 SOT23 006aaa154 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MMBZ27VA-T SOT23 plastic, surface-mounted package 3 terminals 1.9 mm SOT23 pitch 2.9 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 FN% MMBZ27VA-T 1 % = placeholder for manufacturing site code MMBZ27VA-T All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 5 May 2021 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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