DocumentNumber:MMRF1304L FreescaleSemiconductor Rev. 0, 12/2013 Technical Data RFPowerLDMOSTransistor HighRuggedness N--Channel MMRF1304LR5 Enhancement--ModeLateral MOSFET RF power transistor suitable for both narrowband and broadband CW or pulseapplicationsoperatingatfrequenciesfrom1.8to2000MHz, suchas military radiocommunicationsandradar.This deviceis fabricatedusing Freescalesenhancedruggednessplatformandissuitableforusein 1.8--2000MHz,25W,50V applications where high VSWRs are encountered. WIDEBAND TypicalPerformance: V =50Vdc RFPOWERLDMOSTRANSISTOR DD P Frequency G IMD out ps D SignalType (W) (MHz) (dB) (%) (dBc) (1,3) 1.8--30 Two--Tone 25PEP 25.0 50.0 --28 (10 kHz spacing) (2,3) 30--512 Two--Tone 25PEP 17.3 32.0 --32 (200 kHz spacing) (4) 512 Pulse 25 Peak 25.9 74.0 (100 sec,20% Duty Cycle) NI--360--2 (4) 512 CW 25 26.0 75.0 LoadMismatch/Ruggedness Frequency P Test in (MHz) SignalType VSWR (W) Voltage Result (1) 30 CW >65:1 0.11 50 No Device at allPhase (3 dB Degradation Gate12 Drain Angles Overdrive) (2) 512 CW 0.95 (3 dB Overdrive) (4) 512 Pulse 0.14 Peak (Top View) (100 sec,20% (3 dB Duty Cycle) Overdrive) Note: The backside of the package is the (4) 512 CW 0.14 source terminalforthe transistor. (3 dB Figure1.PinConnections Overdrive) 1. Measured in 1.8--30 MHz broadband reference circuit. 2. Measured in 30--512 MHz broadband reference circuit. 3. The values shown are the minimum measured performance numbers across the indicated frequency range. 4. Measured in 512 MHz narrowband test circuit. Features Wide Operating Frequency Range ExtremeRuggedness Unmatched, Capable of Very Broadband Operation IntegratedStability Enhancements Low Thermal Resistance ExtendedESD ProtectionCircuit In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel. FreescaleSemiconductor, Inc., 2013. All rights reserved. MMRF1304LR5 RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +133 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +150 C C (1,2) Operating Junction Temperature Range T --40 to +225 C J Table2.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 1.4 C/W JC CW: Case Temperature 81 C, 25W CW, 50Vdc, I =10mA, 512MHz DQ ThermalImpedance, Junction to Case Z 0.32 C/W JC Pulse:Case Temperature 77C, 25 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =10mA, 512MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2000V Machine Model(perEIA/JESD22--A115) B,passes 200V Charge Device Model(perJESD22--C101) IV, passes 1200V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 140 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 7 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =85 Adc) DS D Gate Quiescent Voltage V 2.0 2.4 3.0 Vdc GS(Q) (V =50Vdc,I =10 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.23 Vdc DS(on) (V =10Vdc,I =210mAdc) GS D DynamicCharacteristics Reverse TransferCapacitance C 0.17 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 14.7 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 39.0 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to