DocumentNumber:MRF101AN NXPSemiconductors Rev. 1, 05/2019 TechnicalData RFPowerLDMOSTransistors MRF101AN HighRuggedness N--Channel MRF101BN Enhancement--ModeLateral MOSFETs ThesedevicesaredesignedforuseinHFandVHFcommunications, industrial,scientificandmedical(ISM)andbroadcastandaerospace 1.8250MHz,100WCW,50V applications. The devices are extremely rugged and exhibit high performance WIDEBAND upto250MHz. RFPOWERLDMOSTRANSISTORS TypicalPerformance: V =50Vdc DD Frequency P G out ps D (MHz) SignalType (W) (dB) (%) S (1) 13.56 CW 130CW 27.1 79.6 (2) 27 CW 125CW 24.9 79.6 (3) 40.68 CW 120CW 23.8 81.5 G (4) S 50 CW 119 CW 22.8 82.1 D (5) 81.36 CW 130CW 23.2 80.8 TO--220--3 (6,7) MRF101AN 87.5108 CW 115 CW 20.6 76.8 (7,8) 136174 CW 104CW 21.2 76.5 S (9) 230 Pulse 115Peak 21.1 76.7 (100 sec,20%Duty Cycle) LoadMismatch/Ruggedness D Frequency P Test in S G SignalType VSWR (MHz) (W) Voltage Result TO--220--3 40.68 CW >65:1 at all 0.64CW 50 NoDevice MRF101BN Phase Degradation Angles 230 Pulse >65:1 at all 1.8Peak 50 NoDevice (100 sec,20% Phase (3dB Degradation Duty Cycle) Angles Overdrive) 1. Measuredin13.56MHz referencecircuit(page5). D 2. Measuredin27MHz referencecircuit(page9). 3. Measuredin40.68MHz referencecircuit(page13). 4. Measuredin50MHz referencecircuit(page17). Backside 5. Measuredin81.36MHz referencecircuit(page21). 6. Measuredin87.5108MHz broadbandreferencecircuit(page25). Note: Exposedbacksideofthepackage G 7. Thevalues shownarethecenterbandperformancenumbers andtabalsoserves as asource across theindicatedfrequency range. terminalforthetransistor. 8. Measuredin136174MHz VHFbroadbandreferencecircuit(page30). S 9. Measuredin230MHz fixture(page34). Features Mirror pinout versions (A andB) tosimplify useinapush--pull, two--upconfiguration Characterizedfrom30to50V Suitablefor linear application IntegratedESD protectionwithgreater negativegate--source voltagerangefor improvedClass C operation IncludedinNXP product longevity program withassured supply for aminimum of 15years after launch TypicalApplications Industrial, scientific, medical(ISM) RadioandVHF TV broadcast Laser generation HF andVHF communications Plasmaetching Switchmodepower supplies Particleaccelerators MRI andother medicalapplications Industrialheating, weldinganddryingsystems 20182019NXPB.V. MRF101ANMRF101BN RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+133 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 50 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+175 C J TotalDeviceDissipation T =25 C P 182 W C D Derateabove25 C 0.91 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.1 C/W JC CW:CaseTemperature77 C,150W CW,50Vdc,I =100mA,40.68MHz DQ ThermalImpedance,JunctiontoCase Z 0.37 C/W JC Pulse:CaseTemperature73C,113W Peak,100 sec PulseWidth,20%Duty Cycle, 50Vdc,I =100mA,230MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJS--001--2017) 1B,passes 1000V ChargeDeviceModel(perJS--002--2014) C3,passes 1200V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 133 Vdc (BR)DSS (V =0Vdc,I =50mAdc) GS D ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =290 Adc) DS D GateQuiescentVoltage V 2.5 Vdc GS(Q) (V =50Vdc,I =100mAdc) DS D Drain--SourceOn--Voltage V 0.45 Vdc DS(on) (V =10Vdc,I =1Adc) GS D ForwardTransconductance g 7.1 S fs (V =10Vdc,I =8.8Adc) DS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat