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MRF24G300HS-2450

MRF24G300HS-2450 electronic component of NXP

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RF Development Tools MRF24G300HS 2400-2500 MHz Reference Circuit

Manufacturer: NXP
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MOQ : 1
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1 : USD 1327.8925
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0 - Global Stock

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Multiples : 1
1 : USD 1053.3466
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DocumentNumber:MRF24G300HS NXPSemiconductors Rev. 0, 09/2019 Technical Data RFPowerGaNTransistors MRF24G300HS These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in MRF24G300H CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for 24002500MHz,300WCW,50V applicationsoperatinginthe2400to2500MHzband.Thereisnoguaranteeof WIDEBAND performance when these parts are used in applications designed outside of RFPOWERGaNTRANSISTORS these frequencies. TypicalPerformance: In 24002500 MHz MRF24G300HS reference circuit, (1) V =48Vdc,V =5Vdc DD GS(A+B) Frequency P P G NI--780S--4L in out ps D MRF24G300HS (MHz) SignalType (W) (W) (dB) (%) 2400 CW 10.0 336 15.3 70.4 2450 10.0 332 15.2 73.0 2500 10.0 307 14.9 74.4 1. Alldata measured in fixture with device soldered to heatsink. NI--780H--4L LoadMismatch/Ruggedness MRF24G300H Signal Frequency P Test in Type VSWR (MHz) (W) Voltage Result 2450 Pulse >20:1 at 12.6 Peak 55 No Device (100 sec, AllPhase Degradation 20% Duty Angles Cycle) Features GateA DrainA 31 Advanced GaN on SiC, for optimal thermal performance Characterized for CW, long pulse (up to several seconds) and short pulse operations GateB42 DrainB Device can be used in a single--ended or push--pull configuration Input matched for simplified input circuitry Qualifiedupto55V (Top View) Suitable for linear application Note: The backside of the package is the source terminalfor the transistor. TypicalApplications Industrial heating Figure1.PinConnections Welding and heat sealing Plasma generation Lighting Scientific instrumentation Medical Microwave ablation Diathermy 2019 NXP B.V. MRF24G300HSMRF24G300H RF Device Data NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 125 Vdc DSS Gate--Source Voltage V 8, 0 Vdc GS Operating Voltage V 0to+55 Vdc DD Maximum Forward Gate Current, I , T =25 C I 42 mA G(A+B) C GMAX Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 55to+150 C C (1) Maximum ChannelTemperature T 350 C CH Table2.ThermalCharacteristics Characteristic Symbol Value Unit (2) ThermalResistance by Infrared Measurement, Active Die Surface--to--Case R (IR) 0.52 C/W JC Case Temperature 125 C, P =118W D (3) ThermalResistance by Finite Element Analysis, Channel--to--Case R 0.72 C/W CHC Case Temperature 125 C, P =118W (FEA) D Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JS--001--2017) 1B, passes 900 V Charge Device Model(per JS--002--2014) 3, passes 1200 V Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Drain--Source Breakdown Voltage V 150 Vdc (BR)DSS (V =8Vdc,I =24.3 mAdc) GS D (4) OnCharacteristics Gate Threshold Voltage V 3.8 3.16 2.3 Vdc GS(th) (V =10Vdc,I =22mAdc) DS D Gate--Source Leakage Current I 10.0 mAdc GSS (V =0Vdc,V =5Vdc) DS GS Table5.OrderingInformation Device TapeandReelInformation Package MRF24G300HSR5 R5 Suffix =50 Units, 32 mm Tape Width, 13--inch Reel NI--780S--4L MRF24G300HR5 R5 Suffix =50 Units, 56 mm Tape Width, 13--inch Reel NI--780H--4L 1. Reliability tests were conducted at 225 C. Operation with T at 350 C will reduce median time to failure. CH 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to

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