Product Information

MRF6V2150NBR1

MRF6V2150NBR1 electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 61.5882 ea
Line Total: USD 123.18

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Operating Frequency
Gain
Output Power
Mounting Style
Packaging
Drain Efficiency Typ
Drain Source Voltage Max
Input Capacitance Typ Vds
Output Capacitance Typ Vds
Frequency Min
Operating Temp Range
Pin Count
Mode Of Operation
Screening Level
Channel Mode
Channel Type
Package Type
Number Of Elements
Vswr Max
Rad Hardened
Reverse Capacitance Typ
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DocumentNumber:MRF6V2150N FreescaleSemiconductor Rev. 4, 4/2010 TechnicalData RFPowerField--EffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V2150NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2150NBR1 frequenciesupto450MHz.Devicesareunmatchedandaresuitableforusein industrial, medical andscientific applications. Typical CW Performanceat 220MHz: V =50Volts,I = 450mA, DD DQ 10--450MHz,150W,50V P = 150Watts out LATERALN--CHANNEL Power Gain 25dB SINGLE--ENDED DrainEfficiency 68.3% BROADBAND Capableof Handling10:1VSWR, 50Vdc, 220MHz, 150Watts CW RFPOWERMOSFETs Output Power Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CASE1486--03,STYLE1 TO--270 WB--4 QualifiedUptoaMaximum of 50V Operation DD PLASTIC IntegratedESD Protection MRF6V2150NR1 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. CASE1484--04,STYLE1 TO--272 WB--4 PLASTIC MRF6V2150NBR1 PARTSARESINGLE--ENDED Table1.MaximumRatings Rating Symbol Value Unit RF /V RF /V Drain--Source Voltage V --0.5,+110 Vdc in GS out DS DSS Gate--SourceVoltage V --0.5,+12 Vdc GS StorageTemperatureRange T --65to+150 C stg RF /V RF /V in GS out DS CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J (Top View) Table2.ThermalCharacteristics (2,3) Note: Exposedbacksideofthepackageis Characteristic Symbol Value Unit thesourceterminalforthetransistor. ThermalResistance,JunctiontoCase Figure1.PinConnections CaseTemperature80C, 150W CW R 0.24 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =75mA,V =0Vdc) D GS Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 1.62 3 Vdc GS(th) (V =10Vdc,I =400Adc) DS D GateQuiescentVoltage V 1.5 2.6 3.5 Vdc GS(Q) (V =50Vdc,I =450mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =1Adc) GS D DynamicCharacteristics ReverseTransferCapacitance C 1.6 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 93 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 163 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =450mA,P = 150W,f=220MHz,CW DD DQ out PowerGain G 23.5 25 26.5 dB ps Drain Efficiency 66 68.3 % D Input ReturnLoss IRL --17 --9 dB TypicalPerformances(InFreescale27MHz and450MHz TestFixtures,50ohm system)V =50Vdc,I =450mA,P =150W CW DD DQ out PowerGain f =27 MHz G 32.3 dB ps f=450MHz 22.9 Drain Efficiency f =27 MHz 78.7 % D f=450MHz 57.6 Input ReturnLoss f =27MHz IRL --10.6 dB f=450MHz --17.6 ATTENTION: TheMRF6V2150NandMRF6V2150NB arehighpowerdevices andspecialconsiderations must befollowedinboarddesignandmounting. Incorrect mountingcanleadtointernaltemperatures which exceedthemaximum allowableoperatingjunctiontemperature. RefertoFreescaleApplication NoteAN3263 (forbolt downmounting)orAN1907 (forsolderreflowmounting)PRIORTOSTARTINGSYSTEMDESIGNto ensurepropermountingofthesedevices. MRF6V2150NR1MRF6V2150NBR1 RF DeviceData FreescaleSemiconductor 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
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NXP USA Inc.
PH3
PHI

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