Product Information

NUP1301

NUP1301 electronic component of NXP

Datasheet
DIODE, DUAL TVS, 220W, 80V, SOT23
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3867 ea
Line Total: USD 1.93

9 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
13 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 100
Multiples : 1
100 : USD 0.1411
500 : USD 0.1049
1000 : USD 0.0731
5000 : USD 0.0627

Read More Specifications

     
Manufacturer
Product Category
Packaging
Operating Voltage
Power Dissipation Pd
Clamping Voltage Vc Max
Diode Case Style
No Of Pins
Svhc
Breakdown Voltage Max
Msl
Peak Pulse Current Ippm
Reverse Stand-Off Voltage Vrwm
Tvs Polarity
LoadingGif

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Additional Infomation About Product

NUP1301 Ultra low capacitance ESD protection array Rev. 01 11 May 2009 Product data sheet 1. Product prole 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect one signal line in rail-to-rail conguration from the damage caused by ESD and other transients. 1.2 Features n ESD protection of one signal line (rail-to-rail conguration) n Ultra low diode capacitance: C = 0.6 pF d n Very low reverse leakage current: 30 nA n ESD protection up to 30 kV n IEC 61000-4-2 level 4 (ESD) n IEC 61000-4-5 (surge) I = 11 A at t = 8/20 s PP p n AEC-Q101 qualied 1.3 Applications n Telecommunication networks n Video line protection n Microcontroller protection 2 n I C-bus protection n Antenna power supply n Analog audio n Class-D amplier 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V repetitive peak reverse --80 V RRM voltage C diode capacitance f = 1 MHz - 0.6 0.75 pF d V =0V R I reverse current V = 80 V - - 100 nA R RNUP1301 NXP Semiconductors Ultra low capacitance ESD protection array 2. Pinning information Table 2. Pinning Pin Symbol Description Simplied outline Graphic symbol 1 GND ground 3 3 2V supply voltage CC 3 I/O input/output 12 12 006aaa763 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NUP1301 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking 1 Type number Marking code NUP1301 LJ* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V repetitive peak reverse -80 V RRM voltage V reverse voltage - 80 V R 1 I forward current - 215 mA F I repetitive peak forward t 1 ms 0.25 - 500 mA FRM p current NUP1301 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 11 May 2009 2 of 13

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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