Product Information

NX3DV221GM

NX3DV221GM electronic component of NXP

Datasheet
IC, SWITCH, HI-SPD USB 2.0, XQFN10U

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1877 ea
Line Total: USD 1.19

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 1.1341
10 : USD 0.9631
100 : USD 0.7533
500 : USD 0.6467
1000 : USD 0.5036
2500 : USD 0.4647

     
Manufacturer
Product Category
Packaging
No Of Channels
Output Current
Switch Type
On State Resistance Max
No Of Pins
Supply Voltage Min
Supply Voltage Max
Logic Case Style
Msl
Svhc
Power Dissipation Pd
Supply Voltage Range
LoadingGif

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NX3DV221 High-speed USB 2.0 switch with enable Rev. 4 19 June 2013 Product data sheet 1. General description The NX3DV221 is a high-bandwidth switch designed for the switching of high-speed USB 2.0 signals in handset and consumer applications. These applications could be cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch allows signal to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps). 2. Features and benefits Wide supply voltage range from 2.3 V to 3.6 V Switch voltage accepts signals up to 5.5 V 1.8 V control logic at V = 3.6 V CC Low-power mode when OE is HIGH (2 A maximum) 6 (maximum) ON resistance 0.1 (typical) ON resistance mismatch between channels 6 pF (typical) ON-state capacitance High bandwidth (1.0 GHz typical) Latch-up performance exceeds 100 mA per JESD 78B Class II Level A ESD protection: HBM JESD22-A114F Class 3A exceeds 8000 V CDM JESD22-C101E exceeds 1000 V HBM exceeds 12000 V for I/O to GND protection Specified from 40 C to +85 C 3. Applications Routes signals for USB 1.0, 1.1 and 2.0NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version NX3DV221GM 40 C to +85 C XQFN10 plastic extremely thin quad flat package no leads SOT1049-3 10 terminals body 2 1.55 0.5 mm NX3DV221TK 40 C to +85 C HVSON10 plastic thermal enhanced very thin small outline SOT650-2 package no leads 10 terminals 3 3 0.85 mm 5. Marking Table 2. Marking 1 Type number Marking code NX3DV221GM x21 NX3DV221TK x21 1 The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram 8 1 D+ 1D+ 7 2 D- 1D- 3 2D+ V CC 4 2D- CHARGE PUMP 6 OE CONTROLLOGIC 9 S 001aao078 Fig 1. Logic symbol NX3DV221 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 19 June 2013 2 of 19

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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