Product Information

PBHV8515QA

PBHV8515QA electronic component of NXP

Datasheet
TRANSISTOR, AEC-Q101, BIPOL, NPN, 150V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5519 ea
Line Total: USD 0.55

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.5519
10 : USD 0.4521
100 : USD 0.3084
500 : USD 0.2313
1000 : USD 0.1739

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage V Br Ceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBHV9515QA. 2. Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical Inspection (AOI) of solder joint 3. Applications LED driver for LED chain module High Intensity Discharge (HID) front lighting Automotive motor management Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 150 V CEO voltage I collector current - - 500 mA C h DC current gain V = 10 V I = 100 mA pulsed 100 215 - FE CE C t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product DFN1010D-3NXP Semiconductors PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 1 2 E emitter B 3 C collector 4 3 E 4 C collector sym123 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV8515QA DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small SOT1215 outline package no leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PBHV8515QA 00 00 11 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PBHV8515QA All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 19 November 2015 2 / 17

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