PBLS2002S,115 NXP

PBLS2002S 20 V PNP BISS loadswitch Rev. 02 24 August 2009 Product data sheet 1. Product prole 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor and NPN Resistor- CEsat Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD) plastic package. 1.2 Features n Low V (BISS) transistor and resistor-equipped transistor in one package CEsat n Low threshold voltage (< 1 V) compared to MOSFET n Low drive power required n Space-saving solution n Reduction of component count 1.3 Applications n Supply line switches n Battery charger switches n High-side switches for LEDs, drivers and backlights n Portable equipment 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low V (BISS) transistor CEsat V collector-emitter voltage open base - - - 20 V CEO I collector current - - -3A C [1] R collector-emitter saturation I = - 2A; - 75 120 m CEsat C resistance I = - 200 mA B TR2; NPN resistor-equipped transistor V collector-emitter voltage open base - - 50 V CEO I output current - - 100 mA O R1 bias resistor 1 (input) 3.3 4.7 6.1 k R2/R1 bias resistor ratio 0.8 1 1.2 [1] Pulse test: t 300 s; 0.02 pPBLS2002S NXP Semiconductors 20 V PNP BISS loadswitch 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 input (base) TR2 8 5 1 8 2 GND (emitter) TR2 R1 3 base TR1 R2 4 emitter TR1 5 collector TR1 2 7 1 4 TR2 3 6 6 collector TR1 7 output (collector) TR2 8 output (collector) TR2 4 5 TR1 006aaa813 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBLS2002S SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Marking Table 4. Marking codes Type number Marking code PBLS2002S LS2002S PBLS2002S_2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 24 August 2009 2 of 16