PBSS2515E,115 NXP

PBSS2515E 15 V, 0.5 A NPN low V (BISS) transistor CEsat Rev. 02 21 April 2009 Product data sheet 1. Product prole 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in an ultra small CEsat SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515E. 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n DC-to-DC conversion n MOSFET gate driving n Motor control n Charging circuits n Low power switches (e.g. motors, fans) n Portable applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 15 V CEO I collector current - - 0.5 A C I peak collector current single pulse --1 A CM t 1ms p 1 R collector-emitter I = 500 mA - 300 500 m CEsat C saturation resistance I =50mA B 1 Pulse test: t 300 s 0.02. pPBSS2515E NXP Semiconductors 15 V, 0.5 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS2515E SC-75 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code PBSS2515E 1Q 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 15 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 0.5 A C I peak collector current single pulse -1 A CM t 1ms p I peak base current single pulse - 100 mA BM t 1ms p 1 P total power dissipation T 25 C - 150 mW tot amb 2 - 250 mW T junction temperature - 150 C j T ambient temperature - 65 +150 C amb T storage temperature - 65 +150 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . PBSS2515E 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 21 April 2009 2 of 12