Product Information

PDTB123YQA

PDTB123YQA electronic component of NXP

Datasheet
BRT TRANSISTOR, AEC-Q101, -50V, 2.2K/10K
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0699 ea
Line Total: USD 0.07

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.0699
10 : USD 0.0655
100 : USD 0.0548
250 : USD 0.0491
500 : USD 0.0428
1000 : USD 0.0409

Read More Specifications

     
Manufacturer
Product Category
Collector Emitter Voltage V Br Ceo
Continuous Collector Current Ic
Base Input Resistor R1
Base-Emitter Resistor R2
Resistor Ratio R1 / R2
Rf Transistor Case
No Of Pins
Product Range
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PDTB113Z/123Y/143XQA series 50 V, 500 mA PNP resistor-equipped transistors Rev. 1 6 January 2016 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number R1 R2 Package NXP NPN complement PDTB113ZQA 1 k 10 k DFN1010D-3 PDTD113ZQA (SOT1215) PDTB123YQA 2.2 k 10 k PDTD123YQA PDTB143XQA 4.7 k 10 k PDTD143XQA 1.2 Features and benefits 500 mA output current capability Reduced pick and place costs Built-in bias resistors Low package height of 0.37 mm 10% resistor ratio tolerance Suitable for Automatic Optical Inspection (AOI) of solder joint Simplifies circuit design AEC-Q101 qualified Reduces component count 1.3 Applications Digital applications Controlling IC inputs Cost saving alternative for Switching loads BC807/BC817 series in digital applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 50 V CEO I output current - - 500 mA O DFN1010D-3PDTB113Z/123Y/143XQA NXP Semiconductors 50 V, 500 mA PNP resistor-equipped transistors 2. Pinning information Table 3. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 I input (base) O 2 GND GND (emitter) 1 R1 I 3 O output (collector) 4 3 4 O output (collector) R2 GND 2 aaa-019606 Transparent top view 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTB113ZQA DFN1010D-3 plastic thermal enhanced ultra thin small outline SOT1215 package no leads 3 terminals PDTB123YQA body: 1.1 1.0 0.37 mm PDTB143XQA PDTB113Z 123Y 143XQA SER All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved. Product data sheet Rev. 1 6 January 2016 2 of 21

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