PMEG10010ELR NXP

PMEG10010ELR 100 V, 1 A low leakage current Schottky barrier rectifier 7 May 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 1 A F(AV) Reverse voltage: V 100 V R Low forward voltage: V = 710 mV F High power capability due to clip-bonding technology Extremely low leakage current I = 40 nA R High temperature T 175 C j AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 170 C - - 1 A F(AV) sp current square wave V reverse voltage T = 25 C - - 100 V R j V forward voltage I = 1 A t 300 s 0.02 - 710 770 mV F F p T = 25 C j I reverse current V = 100 V t 300 s 0.02 - 40 150 nA R R p T = 25 C j Scan or click this QR code to view the latest information for this product SOD123WNXP Semiconductors PMEG10010ELR 100 V, 1 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 1 2 2 A anode sym001 SOD123W 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG10010ELR SOD123W plastic surface mounted package 2 leads SOD123W 7. Marking Table 4. Marking codes Type number Marking code PMEG10010ELR K7 PMEG10010ELR All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 7 May 2015 2 / 15