Product Information

PMN70XPE

PMN70XPE electronic component of NXP

Datasheet
MOSFET, P CH, 20V, 4.1A, SOT457
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1924 ea
Line Total: USD 0.19

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.1924
25 : USD 0.1807
100 : USD 0.1501
250 : USD 0.1352
500 : USD 0.1183
3000 : USD 0.1124

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
LoadingGif

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Additional Infomation About Product

PMN70XPE 20 V, single P-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 2 kV ESD protection 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS amb V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -4.1 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2 A T = 25 C - 70 85 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMN70XPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 6 5 4 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain S 6 D drain 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN70XPE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN70XPE WF 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS amb V gate-source voltage -12 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - -4.1 A D GS amb V = -4.5 V T = 25 C 1 - -3.2 A GS amb V = -4.5 V T = 100 C 1 - -2 A GS amb I peak drain current T = 25 C single pulse t 10 s - -12.8 A DM amb p P total power dissipation T = 25 C 2 - 500 mW tot amb 1 - 1220 mW T = 25 C - 6250 mW sp PMN70XPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 6 July 2012 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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