SE97B DDR memory module temp sensor with integrated SPD Rev. 01 27 January 2010 Product data sheet 1. General description Meets JEDEC Specification 42.4 TSE2002B1, 3 Jun 2009. The NXP Semiconductors SE97B measures temperature from 40 C to +125 C with JEDEC Grade B 1 C maximum accuracy between +75 C and +95 C critical zone and also provide 256 bytes 2 of EEPROM memory communicating via the I C-bus/SMBus. It is typically mounted on a DDR3 Dual In-Line Memory Module (DIMM) measuring the DRAM temperature in accordance with the new JEDEC (JC-42.4) Mobile Platform Memory Module Temperature Sensor Component specification and also replacing the Serial Presence Detect (SPD) which is used to store memory module and vendor information. The SE97B thermal sensor and EEPROM operates over the V range of 3.0 V to 3.6 V. DD The TS consists of a Analog to Digital Converter (ADC) that monitors and updates its own temperature readings 10 times per second, converts the reading to a digital data, and latches them into the data temperature register. User-programmable registers, the specification of upper/lower alarm and critical temperature trip points, EVENT output control, and temperature shutdown, provide flexibility for DIMM temperature-sensing applications. When the temperature changes beyond the specified boundary limits, the SE97B outputs an EVENT signal using an open-drain output that can be pulled up between 0.9 V and 3.6 V. The user has the option of setting the EVENT output signal polarity as either an active LOW or active HIGH comparator output for thermostat operation, or as a temperature event interrupt output for microprocessor-based systems. The EVENT output can also be configured as only a critical temperature output. The EEPROM is designed specifically for DRAM DIMMs SPD. The lower 128 bytes (address 00h to 7Fh) can be Permanent Write Protected (PWP) or Reversible Write Protected (RWP) by software. This allows DRAM vendor and product information to be stored and write protected. The upper 128 bytes (address 80h to FFh) are not write protected and can be used for general purpose data storage. The SE97B has a single die for both the temp sensor and EEPROM for higher reliability 2 and supports the industry-standard 2-wire I C-bus/SMBus serial interface. The SMBus TIMEOUT function is supported to prevent system lock-ups. Manufacturer and Device ID registers provide the ability to confirm the identity of the device. Three address pins allow up to eight devices to be controlled on a single bus. The SE98B is available as the SE97B thermal sensor only.SE97B NXP Semiconductors DDR memory module temp sensor with integrated SPD Table 1. Comparison of SE97 versus SE97B features Feature SE97 SE97B JEDEC specification old JEDEC specification new JEDEC specification Bit 8 1 Thermal Sensor shutdown no SMBus Timeout SMBus Timeout 25 ms to 35 ms Bit 8 0 Thermal Sensor active SMBus Timeout 25 ms to 35 ms 2 I C-bus maximum frequency 400 kHz 2 I C SCL and SDA V /V voltage levels V =0.3 V V =0.7 V IL IH IL(max) DD IH(min) DD Capabilities bit 6 SMBus Timeout set to 0 set to 1 EVENT pin operation frozen de-assert Capabilities bit 7 EVENT pin set to 0 set to 1 A0 pin is 10 V tolerant yes Capabilities bit 5 VHV set to 0 set to 1 2 I C spike suppression 50 ns 2 I C input hysteresis - 0.05 V DD SE97 Device ID register 1010 0010 Revision ID register 0000 0001 0000 0011 Temperature Sensor accuracy Grade B Improved Grade B Power-On Reset (POR) 0.6 V 1.8 V Temperature Sensor voltage range 3.0 V to 3.6 V EEPROM Write voltage range 3.0 V to 3.6 V EEPROM Read voltage range 1.7 V to 3.6 V 3.0 V to 3.6 V 2mm 3mm 0.8 mm package assembly plant Hong Kong assembly plant Bangkok (thicker die and leadframe) 2. Features 2.1 General features JEDEC (JC-42.4) DIMM temperature sensor plus 256-byte serial EEPROM for Serial Presence Detect (SPD) SDA open-drain output design for best operation in distributed multi-point applications Shutdown current: 0.1 A (typ.) and 5.0 A (max.) Power-on reset: 1.8 V (typ.) 2 2-wire interface: I C-bus/SMBus compatible, 0 Hz to 400 kHz SMBus Alert Response Address and TIMEOUT 25 ms to 35 ms (programmable) ESD protection exceeds 2500 V HBM per JESD22-A114, 250 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101 Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA Available in HWSON8 package 2.2 Temperature sensor features 11-bit ADC Temperature-to-Digital converter with 0.125 C resolution Voltage range: 3.0 V to 3.6 V Operating current: 250 A (typ.) and 400 A (max.) SE97B 1 NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 27 January 2010 2 of 53