Product Information

TYN20-800T,127

TYN20-800T,127 electronic component of NXP

Datasheet
Thyristor SCR 800V 231A 3-Pin(3+Tab) TO-220AB Tube
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.4764 ea
Line Total: USD 476.4

0 - Global Stock
MOQ: 1000  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 6000
Multiples : 6000
6000 : USD 0.5649

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Additional Infomation About Product

TYN20-800T SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (T = 150 j(max) C). 1.2 Features and benefits High bidirectional blocking voltage capability High junction operating temperature capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability Very high current surge capability 1.3 Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage V repetitive peak reverse - - 800 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 210 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 231 A j(init) t = 8.3 ms p T junction temperature - - 150 C j I RMS on-state current half sine wave T 129 C Fig. 1 - - 20 A T(RMS) mb Fig. 2 Scan or click this QR code to view the latest information for this productNXP Semiconductors TYN20-800T SCR Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 4.5 32 mA GT D T j Dynamic charateristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 300 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version TYN20-800T TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage - 800 V DRM V repetitive peak reverse voltage - 800 V RRM I average on-state current half sine wave T 129 C Fig. 3 - 12.7 A T(AV) mb I RMS on-state current half sine wave T 129 C Fig. 1 - 20 A T(RMS) mb Fig. 2 TYN20-800T All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 23 July 2012 2 / 11

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