EESH3DS

Photomicrosensor (Transmissive) EE-SH3 Series Dimensions Features High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing Note: All units are in millimeters unless otherwise indicated. aperture, high-sensitivity model with a 1-mm-wide sensing aper- Four, R1 Two, C1.5 ture, and model with a horizontal sensing aperture are available. Solder terminal models: 6.2 EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS PCB terminal models: 190.15 EE-SH3-B/-SH3-C/-SH3-D/-SH3-G 25.4 Matted Solder terminal PCB terminal Cross section AA Cross section AA Two, 3.20.2 Center mark Absolute Maximum Ratings (Ta = 25C) dia. holes 3.40.2 Item Symbol Rated value Emitter Forward current I 50 mA F 10.2 7.20.2 (see note 1) 7.20.2 Pulse forward cur- I 1 A FP rent (see note 2) Four, 0.25 Reverse voltage V 4 V R 2.540.2 7.60.3 Detector CollectorEmitter V 30 V CEO voltage Model Aperture (a x b) EmitterCollector V --- ECO EE-SH3(-B) 2.1 x 0.5 voltage EE-SH3-C(S) 2.1 x 1.0 Collector current I 20 mA C EE-SH3-D(S) 2.1 x 0.2 Collector dissipa- P 100 mW C Internal Circuit EE-SH3-G(S) 0.5 x 2.1 tion (see note 1) K C Ambient tem- Operating Topr 25C to 85C Unless otherwise specified, the perature Storage Tstg 30C to 100C tolerances are as shown below. Soldering temperature Tsol 260C A E Dimensions Tolerance (see note 3) 3 mm max. 0.2 Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm 6 0.24 ature exceeds 25C. A Anode 2. The pulse width is 10 s maximum with a frequency of 6 < mm 10 0.29 K Cathode 100 Hz. 10 < mm 18 0.35 C Collector 3. Complete soldering within 10 seconds. 18 < mm 30 0.42 E Emitter Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S) EE-SH3-G(S) Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wave- 940 nm typ. I = 20 mA P F length Detector Light current I 0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min. 0.5 to 14 mA I = 20 mA, L F V = 10 V CE Dark current I 2 nA typ., 200 nA max. V = 10 V, D CE 0 lx Leakage current I --- --- LEAK CollectorEmitter satu- V (sat) 0.1 V typ., 0.4 V max. --- 0.1 V typ., I = 20 mA, CE F rated voltage 0.4 V max. I = 0.1 mA L Peak spectral sensitivity 850 nm typ. V = 10 V P CE wavelength Rising time tr 4 s typ. V = 5 V, CC R = 100 , Falling time tf 4 s typ. L I = 5 mA L 146 EE-SH3 Series Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C IF V = 10 V CE Ta = 30C PC Ta = 25C Ta = 70C Forward current I (mA) Forward voltage V (V) F F Ambient temperature Ta (C) Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient Voltage Characteristics (EE-SH3(-B)) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) V = 10 V Ta = 25C I = 20 mA CE F 0 lx V = 5 V CE I = 50 mA F I = 40 mA F I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Sensing Position Characteristics Sensing Position Characteristics Response Time vs. Load Resist- (EE-SH3-D(S)) (EE-SH3(-B)) ance Characteristics (Typical) I = 20 mA V = 5 V F CC I = 20 mA F V = 10 V Ta = 25C CE V = 10 V CE Ta = 25C Ta = 25C Center of optical axis Center of optical axis Load resistance R (k ) L Distance d (mm) Distance d (mm) Sensing Position Characteristics Sensing Position Characteristics Response Time Measurement (EE-SH3-G(S)) (EE-SH3-C(S)) Circuit I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V Input CE Ta = 25C Ta = 25C Center of optical axis 90 % Output 10 % 0 + d Input Center of optical axis Output Distance d (mm) Distance d (mm) EE-SH3 Series Photomicrosensor (Transmissive) 147 Response time tr, tf (s) Forward current I (mA) F Relative light current I (%) Light current I (mA) L L Collector dissipation P (mW) C Relative light current I (%) Relative light current I (%) L L Forward current I (mA) Relative light current I (%) F L Dark current I (nA) D Relative light current I (%) L Light current I (mA) L