G3VM-353B1

MOS FET Relays Technical Information Introduction New models with a wider range of characteristics provide an array of The built-in Current Limit Function (CLR models) has many uses. solutions, meeting the needs of todays high performance applications. Traditionally used to clamp excessive over current fault conditions in telecom equipment, this feature can also be used to good effect to Our expanded range of MOS FET relays, Type G3VM, sets the resist transient and short circuit conditions. benchmark in Solid State Relays (SSRs). Products are manufactured using the latest advances in automated production and include a MOS FET relays are the ideal data and telecommunication solution variety of improved construction technologies within the areas of the for line seizing, line switching, hook switching, Data Access Arrange- input LED, PDA (Photo Diode Array used as a photocoupler) and ment (DAA) function, line transformer circuit control and other feature MOS FET chips used in the load switching circuit. As a result, further phone functions. Central office applications require high reliability reductions in package size and power requirements have been and long life. Here the G3VM is ideal for use in the areas of Sub- achieved. scriber Line Interfaces (SLICs) Multiplexers and Routers. In addition, Local Area Networks (LANs) and Network Termination Units (NTUs) Combining the advantages of mechanical and solid state technology, including Set-Top Boxes (STBs) and Remote Metering Systems the new G3VM range gives you unprecedented capability to design. (RMS) can take advantage of the G3VMs small size and low ON All models featured include a double MOS FET load circuit, enabling resistance. the designer complete versatility since it makes no difference whether an AC or DC load in either direction is connected (Connec- Advances in performance and cost reduction enable MOS FET tion A). Thus, the MOS FET relay is a fully functional alternative to an relays to be considered as good alternatives to Reed Relays in appli- electromechanical relay with minimal additional drive circuitry. cation areas such as security motion detectors (standard and anti- mask PIRs), and Automated Test Equipment (ATE) probe cards. Glossary Term Symbol Description LED forward current I Rated current that can flow continuously in the forward direction of the LED F Repetitive peak LED forward I Rated current that can flow momentarily in the forward direction of the LED FP current LED forward current <I / C Rated change of forward current flowing through the LED relative to ambient temperature above 25 C F reduction rate LED reverse voltage V Rated reverse voltage that can be applied between the anode and the cathode R Connection temperature T Rated temperature that can be allowed in the junction of the LED, Photodetector or MOS FET(s) J Load voltage (AC peak / DC) V Rated voltage that can be applied between the MOS FET s output terminals in the OFF state OFF Continuous load current I Rated current that can flow between the MOS FET s output terminals in the ON state O ON current reduction rate <I / C Rated change of load current flowing between MOS FET(s) output terminals relative to ambient tem- ON perature above 25C Dielectric strength between V Isolation voltage between input and output terminals for a specified time I-O input and output Operating temperature T Ambient temperature range in which the relay may be operated without impairment a Storage temperature T Ambient temperature range in which the relay may be stored while not operating stg LED forward voltage V Voltage drop between the LED s anode and cathode at a certain forward current F LED reverse current I Leakage current flowing in the LED s reverse direction (between cathode and anode) R Capacity between (LED) C Electrostatic capacitance between the anode and the cathode terminals of the LED T terminals Trigger LED forward current I Minimum value of input current necessary to put the output MOS FET(s) in to the ON state FT Maximum resistance with R Resistance between the MOS FET s output terminals specified with reference to ON state current ON output ON Current leakage when the I Leakage current flowing between the MOS FET s output terminals in the OFF state LEAK relay is open Output Capacitance C Electrostatic capacitance between the output terminals in the OFF state off Capacity between I/O C Electrostatic capacitance between the input and output terminals of the relay I-O terminals Insulation resistance R Resistance between the input and output terminals at the specified voltage value I-O Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from OFF Turn-ON time t ON to ON state Turn-OFF time t Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from ON OFF to OFF state Recommended Load Voltage V Rated load voltage that can be applied between the MOS FET s output terminals DD (AC peak / DC) MOS FET Relays Technical Information 1Precautions Typical Relay Driving Circuit Examples WARNING C-MOS Be sure to turn OFF the power when wiring the Relay, otherwise an electric shock may be received. Load WARNING Do not touch the charged terminals of the SSR, otherwise an elec- tric shock may be received. CAUTION Do not apply overvoltage or overcurrent to the I/O circuits of the SSR, otherwise the SSR may malfunction or burn. CAUTION Be sure to wire and solder the Relay under the proper soldering Transistor conditions, otherwise the Relay in operation may generate exces- sive heat and the Relay may burn. 10 to 100 k Load CAUTION Electrostatic sensitive devices. Keep in original packaging until re- quired to use. Avoid touching device terminals. Take static han- dling precautions during processing. Use the following formula to obtain the LED current limiting resis- Appearance Examples tance value to assure that the relay operates accurately. DIP (Dual Inline Package) VCC VOL VF (ON) R1 = OMRON logo 5 to 20 mA Model name Use the following formula to obtain the LED forward voltage value to LOT No. assure that the relay releases accurately. VF (OFF) = VCC VOH < 0.8 V SOP (Small Outline Package) OMRON logo Model name Protection from Surge Voltage on the LOT No. Input Terminals SSOP (Shrink Small Outline Package) If any reversed surge voltage is imposed on the input terminals, insert a diode in parallel to the input terminals as shown in the follow- 211 Model name ing circuit diagram and do not impose a reversed voltage value of 3 V OMRON mark 228 LOT No. or more. Surge Voltage Protection Circuit Example Note:G3V is not printed on the actual product. 2 MOS FET Relays Technical Information