G3VM-51UV

A wide range of contact forms and functions Over 180 different models available G3VM MOSFET RELAYS SELECTION GUIDE What s NEW MOS FET Relay Module is now available Please check each region s Terms & Conditions by region website. Very small packages (VSON(R), S-VSON(L)) are now available OMRON Corporation Electronic and Mechanical Components Company Regional Contact Americas Europe MOS FET Relay Modules MOS FET Relay Modules MOS FET Relay Module SPDT contact form type line up MOS FET Relay Module T switch function type line up The new value of MOS FET Relays now available The worlds first * very low leakage current MOS FET Relay modules by T-structure inside. MOS FET Relay Modules are new products which bring SPDT contact structure, while still keeping long endurance and high These modules achieve very low leakage current which contribute high accuracy measurement of testing equipment for reliability. These modules are suitable for many applications that use SPDT mechanical relays in place of reed relays, as they semiconductors and so on. Its the world s first*T structure circuit installe module with a combined 3 MOS FET relays. *As of 2019, April. eliminate endurance concerns. MOS FET Relay Module T switch function type MOS FET Relay Module SPDT contact form type G3VM-21MT (Low CxR) G3VM-26M10 (Low C ) OFF NEW Suitable for High frequency (1.5GHz) and low signal Suitable for high-frequency switching (300MHz) * Developing other line up now NEW G3VM-26M11 (Low RON) Suitable for high-current switching (1A) Feature 1 Achieves extremely low leakage current Current leakage ILEAK vs Applied voltage VDD G3VM-66M (Diversified) Example of G3VM-21MT measuring circut VDD G3VM-21MT x1 Can be used for various purposes due to 60V 0.4A rating Force Guard Semiconductor relay Leakage current 1pA A 6 5 4 Actual performance is lower than 0.1pA for lowest suppressing MOS FET MOS FET MOS FET Relay C Relay B Relay A Feature 1 Easily achieve SPDT contact structure on your board effect for accuracy of measurement equipment. Vcc COM Minimize This is suitable for as an alternative from Reed relays. MOS FET Relay Module 12 3 MOS FET relay I SPDT contact form type F 0 VDD (V) NANO GATE Complex wiring/components N.O. choices not needed Feature 2 Contributes to mounting area saving due to a very small package N.C. Whole complex circuit in module MOS FET relay Very small outline SPDT module contributes to efficiency of board design. CBIT 5 mm 3.75 mm 2.7 mm Example of SPDT functional circuit Achieves very small size even though it s equipped with complex circuits. Contributes to high density mounting on the board. Feature 2 Saves mounting area due to vertical structure Compared wtih making them on board Feature 3 Significant reduction for maintenance cycles * No physical contact 6 5 4 area saving 78% prevents contact failure Very long life Output circuit from wear Contributes to space efficiency and better using Output circuit is structured by MOS FET relay, which is semiconductor performance for your equipment. 2 2 a semiconductor with no physical contact. Therefore, device * If making them on board 250 mm Mounting Space 56 mm * By our own research there is no wear failture due to no switching of arc. 3 12 Feature 3 Contributes to long life T Module Structure Product Line Up T structure Modules Wear failure will no happen due to switching, because no physical contacts exist inside. Load Voltage Number of Contact Continuous load Maximum resistance with Current leakage when the Capacitance between Turn-ON time Turn-OFF time Dielectric strength Model (V) Max. terminals form current (mA) Max. output ON (Ohm) Typ. relay is open (pA) Max. terminals (pF) Typ. (ms) Max. (ms) Max. between I/O (Vrms) 20 G3VM-21MT 6 1a* 200 8 1 0.6 0.3 0.3 500 Product family of SPDT Modules * Please see Operation mode on datasheet for detail 50.1 3.750.1 SPDT Modules Load Voltage Number of Contact Continuous load Maximum resistance with Current leakage when the Capacitance between Turn-ON time Turn-OFF time Rated input Dielectric strength Dimensions Model (V) Max. terminals form current (mA) Max. output ON (Ohm) Typ. relay is open (nA) Max. terminals (pF) Typ. (ms) Max. (ms) Max. voltage (V) between I/O (Vrms) 2.70.2 Actual Mounting Pad Dimensions Surface-mounting Terminals (Recommended Value, Top View) weight : 0.11 g 20 G3VM-26M10 6 SPDT 200 4.4 2 1 0.3 0.3 5 500 2.4 1.6 20 G3VM-26M11 6 SPDT 1000 0.21 2 40 2.5 1.5 5 500 2.40.1 1.60.1 6-1 6-0.550.1 60 G3VM-66M 6 SPDT 400 1 2 20 1 1 5 500 1 23 6-0.7 6-0.850.1 2.1 Dimensions Surface-mounting Terminals G3VM-66M 50.3 weight : 1 g (0.23) (0.23) 6 5 4 Actual Mounting Pad Dimensions 100.3 (Recommended Value, Top View) 2 VCC : 5VDC CBIT : 5VDC MOS FET Relay Modules model number legend LOAD : 60Vpeak 5 3.60 110.3 Lot No. MADE IN JAPAN G3VM- 1.40 1 2 3 4 5 2.54 2.54 2.54 2.54 10 1.40.1 2 Contact form 4 Additional functions 5 Other information 1.50.1 1 Load voltage 3 Structure 2: 20 V 5: 50 V 8: 80 V 35: 350 V 1: 1a(SPST-NO)* M: MOS FET Relay Modules None: Normal When specications overlap, serial 1.50.1 3: 30 V 6: 60 V 10: 100 V 40: 400 V 6: SPDT * T: T switch function code is added in the recorded order. 2.540.1 2.540.1 4: 40 V 7: 75 V 20: 200 V 60: 600 V * For more detail please see datasheet 2 G3VM G3VM 3 Load Load LEAK I (pA)