1N5250BTR

Zener Diodes 1N5221B - 1N5252B ABSOLUTE MAXIMUM RATINGS (Note 1) Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit www.onsemi.com P Power Dissipation 500 mW D Derate above 50C 4.0 mW/C T Storage Temperature Range 65 to +200 C STG T Operating Junction Temperature Range 65 to +200 C J Lead Temperature (1/16 inch from case +230 C for 10s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AXIAL LEAD 1. These ratings are limiting values above which the serviceability of any CASE 017AG semiconductor device may be impaired. Nonrecurrent square wave Pulse Width = 8.3 ms, T = 50C. A MARKING DIAGRAM Y 22 1B Y = Logo 221B = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2021 Rev. 4 1N5221B/D1N5221B 1N5252B ELECTRICAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. A V (V) I (Note 2) Z Z Min. Typ. Max. Device Z ( ) I (mA) Z ( ) I (mA) I ( A) V (V) T (%/ C) Z Z ZK ZK R R C 1N5221B 2.280 2.4 2.52 30 20 1,200 0.25 100 1.0 0.085 1N5222B 2.375 2.5 2.625 30 20 1,250 0.25 100 1.0 0.085 1N5223B 2.565 2.7 2.835 30 20 1,300 0.25 75 1.0 0.080 1N5225B 2.850 3.0 3.150 29 20 1,600 0.25 50 1.0 0.075 1N5226B 3.135 3.3 3.465 28 20 1,600 0.25 25 1.0 0.070 1N5227B 3.420 3.6 3.780 24 20 1,700 0.25 15 1.0 0.065 1N5228B 3.705 3.9 4.095 23 20 1,900 0.25 10 1.0 0.060 1N5229B 4.085 4.3 4.515 22 20 2,000 0.25 5.0 1.0 0.055 1N5230B 4.465 4.7 4.935 19 20 1,900 0.25 5.0 2.0 0.030 1N5231B 4.845 5.1 5.355 17 20 1,600 0.25 5.0 2.0 0.030 1N5232B 5.320 5.6 5.880 11 20 1,600 0.25 5.0 3.0 0.038 1N5233B 5.700 6.0 6.300 7 20 1,600 0.25 5.0 3.5 0.038 1N5234B 5.890 6.2 6.510 7 20 1,000 0.25 5.0 4.0 0.045 1N5235B 6.460 6.8 7.140 5 20 750 0.25 3.0 5.0 0.050 1N5236B 7.125 7.5 7.875 6 20 500 0.25 3.0 6.0 0.058 1N5237B 7.790 8.2 8.610 8 20 500 0.25 3.0 6.5 0.062 1N5238B 8.265 8.7 9.135 8 20 600 0.25 3.0 6.5 0.065 1N5239B 8.645 9.1 9.555 10 20 600 0.25 3.0 7.0 0.068 1N5240B 9.500 10.0 10.500 17 20 600 0.25 3.0 8.0 0.075 1N5241B 10.450 11.0 11.550 22 20 600 0.25 2.0 8.4 0.076 1N5242B 11.400 12.0 12.600 30 20 600 0.25 1.0 9.1 0.077 1N5243B 12.350 13.0 13.650 13 9.5 600 0.25 0.5 9.9 0.079 1N5244B 13.300 14.0 14.700 15 9.0 600 0.25 0.1 10.0 0.080 1N5245B 14.250 15.0 15.750 16 8.5 600 0.25 0.1 11.0 0.082 1N5246B 15.200 16.0 16.800 17 7.8 600 0.25 0.1 12.0 0.083 1N5247B 16.150 17.0 17.850 19 7.4 600 0.25 0.1 13.0 0.084 1N5248B 17.100 18.0 18.900 21 7.0 600 0.25 0.1 14.0 0.085 1N5249B 18.050 19.0 19.950 23 6.6 600 0.25 0.1 14.0 0.085 1N5250B 19.000 20.0 21.000 25 6.2 600 0.25 0.1 15.0 0.086 1N5251B 20.900 22.0 23.100 29 5.6 600 0.25 0.1 17.0 0.087 1N5252B 22.800 24.0 25.200 33 5.2 600 0.25 0.1 18.0 0.088 V Forward Voltage = 1.2 V Max. I = 200 mA F F 2. Zener Voltage (V ). The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T ) Z L at 30C 1C and 3/8 lead length. www.onsemi.com 2