Product Information

1N5335BG

1N5335BG electronic component of ON Semiconductor

Datasheet
ON Semiconductor Zener Diodes 3.9V 5W

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

48: USD 0.2085 ea
Line Total: USD 10.01

703 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 48  Multiples: 1
Pack Size: 1
Availability Price Quantity
703 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

1N5335BG
ON Semiconductor

1 : USD 0.2546
10 : USD 0.2085
100 : USD 0.1828
500 : USD 0.1618
1000 : USD 0.1586
2000 : USD 0.1586
10000 : USD 0.1586

703 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 48
Multiples : 1

Stock Image

1N5335BG
ON Semiconductor

48 : USD 0.2085
100 : USD 0.1828
500 : USD 0.1618
1000 : USD 0.1586

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vz - Zener Voltage
Voltage Tolerance
Zener Current
Pd - Power Dissipation
Maximum Reverse Leakage Current
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Series
Brand
Voltage Regulation Accuracy
Factory Pack Quantity :
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DATA SHEET www.onsemi.com 5 Watt Surmetic 40 Zener Voltage Regulators Cathode Anode 1N53 Series This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All this in an axial lead, transfermolded plastic package that offers protection in all common environmental conditions. AXIAL LEAD CASE 017AA Features PLASTIC Zener Voltage Range 3.3 V to 200 V ESD Rating of Class 3 (>16 kV) per Human Body Model Surge Rating of up to 180 W 8.3 ms MARKING DIAGRAM Maximum Limits Guaranteed on up to Six Electrical Parameters PbFree Packages are Available* A 1N Mechanical Characteristics 53xxB YYWW CASE: Void free, transfermolded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable A = Assembly Location MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 1N53xxB = Device Number 260C, 1/16 in. from the case for 10 seconds (Refer to Tables on Pages 3 & 4) POLARITY: Cathode indicated by polarity band YY = Year WW = Work Week MOUNTING POSITION: Any =PbFree Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Value Unit ORDERING INFORMATION Max. Steady State Power Dissipation P 5 W D T = 25C, Lead Length = 3/8 in L Device Package Shipping Derate above 25C 40 mW/C 1N53xxB, G Axial Lead 1000 Units/Box JunctiontoLead Thermal Resistance 25 C/W JL (PbFree) Operating and Storage T , T 65 to +200 C J stg 1N53xxBRL, G Axial Lead 4000/Tape & Reel Temperature Range (Note 1) (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specifications 1. Max operating temperature for DC conditions is 150C, but not to exceed Brochure, BRD8011/D. 200C for pulsed conditions with low duty cycle or non repetitive. *For additional information on our PbFree strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2021 Rev. 17 1N5333B/D1N53 Series ELECTRICAL CHARACTERISTICS (T = 25C unless A I otherwise noted, V = 1.2 V Max I = 1.0 A for all types) F F I F Symbol Parameter V Reverse Zener Voltage I Z ZT I Reverse Current ZT Z Maximum Zener Impedance I ZT ZT V V V Z R I Reverse Current ZK I V R F I ZT Z Maximum Zener Impedance I ZK ZK I Reverse Leakage Current V R R V Breakdown Voltage R I Forward Current F V Forward Voltage I F F Zener Voltage Regulator I Maximum Surge Current T = 25C R A V Reverse Zener Voltage Change Z I Maximum DC Zener Current ZM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.2 V Max I = 1.0 A for all types) A F F Leakage Zener Voltage (Note 3) Zener Impedance (Note 3) Current I V I R Z ZM V (Volts) I Z I Z I I I V (Note 4) (Note 5) (Note 6) Z ZT ZT ZT ZK ZK ZK R R Device Device (Note 2) Marking Min Nom Max mA mA A Max Volts A Volts mA 1N5333B 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440 1N5334B 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320 1N5335B 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220 1N5336B 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100 1N5337B 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010 1N5338B 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930 1N5339B 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865 1N5340B 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790 1N5341B 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765 1N5342B 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700 1N5343B 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630 1N5344B 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580 1N5345B 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545 1N5346B 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520 1N5347B 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475 Devices listed in bold, italic are onsemi Preferred devices. Preferred devices are recommended choices for future use and best overall value. 2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of 5%. 3. ZENER VOLTAGE (V ) and IMPEDANCE (I and I ): Test conditions for zener voltage and impedance are as follows: I is applied Z ZT ZK Z 40 10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (T = 25C +8C, 2C). A 4. SURGE CURRENT (I ): Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, R PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 2 (T = 25C +8C, 2C). A 5. VOLTAGE REGULATION ( V ): The conditions for voltage regulation are as follows: V measurements are made at 10% and then at 50% Z Z of the I max value listed in the electrical characteristics table. The test current time duration for each V measurement is 40 10 ms. Mounting Z Z contact located as specified in Note 2 (T = 25C +8C, 2C). A 6. MAXIMUM REGULATOR CURRENT (I ): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, ZM it applies only to the Bsuffix device. The actual I for any device may not exceed the value of 5 watts divided by the actual V of the device. ZM Z T = 25C at 3/8 maximum from the device body. L The G suffix indicates PbFree package or PbFree packages are available. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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