Product Information

1N6376G

1N6376G electronic component of ON Semiconductor

Datasheet
TVS Diodes - Transient Voltage Suppressors 14.1V 1500W Unidirectional

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 40
Multiples : 500

Stock Image

1N6376G
ON Semiconductor

40 : USD 0.3475
1000 : USD 0.3218
N/A

Obsolete
0 - WHS 2

MOQ : 1527
Multiples : 1527

Stock Image

1N6376G
ON Semiconductor

1527 : USD 0.2359
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

1N6376G
ON Semiconductor

1 : USD 1.782
10 : USD 0.8673
100 : USD 0.4828
500 : USD 0.3812
1000 : USD 0.3045
2500 : USD 0.2765
5000 : USD 0.2678
N/A

Obsolete
0 - WHS 4

MOQ : 2000
Multiples : 500

Stock Image

1N6376G
ON Semiconductor

2000 : USD 0.3116
2500 : USD 0.2866
N/A

Obsolete
0 - WHS 5

MOQ : 500
Multiples : 500

Stock Image

1N6376G
ON Semiconductor

500 : USD 0.3435
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Dimensions
Brand
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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TVS Diodes Axial > 1500W > 1N6373 - 1N6381 Series (ICTE-5 - ICTE-36) Pb 1N6373 - 1N6381 Series (ICTE-5 - ICTE-36) Description These devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are the Littelfuse exclusive, cost effective, highly reliable axial leaded package and are ideally suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits Features Working Peak Reverse Voltage Range - 5.0 V to 45 V Maximum Ratings and Thermal Characteristics Peak Power - 1500 Watts 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Rating Symbol Value Unit Low Leakage < 5 A Above 10 V Response Time is Typically < 1 ns Peak Power Dissipation (Note 1) P 1500 W Bi-directional PK T 25C Pb-Free Packages are Available* L W 5.0 Steady State Power Dissipation P T 75C, Lead Length = 3/8 PK L 20 Functional Diagram mW/C Derated above T = 75C L Thermal Resistance, 20 C/W R Junction-to-Lead 8JL Cathode Anode Forward Surge Current (Note 2) I 200 A FSM TA = 25C Additional Information 65 to Operating and Storage T , T C/W Uni-directional J stg Temperature Range +175 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions Datasheet Resources Samples may affect device reliability. 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17TVS Diodes Axial > 1500W > 1N6373 - 1N6381 Series (ICTE-5 - ICTE-36) I-V Curve Characteristics (TA = 25C unless otherwise noted, VF = 3.5 V Max. IF (Note 3) = 100 A) Symbol Parameter I I I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V V R RWM I I V Breakdown Voltage I BR T I Test Current T I Forward Current F I V Forward Voltage I F F Ratings and Characteristic Curves Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 100 10 80 60 40 20 1 0 s s 1 ms 10 ms 02 55 07 51 00 1251 50 175 200 T , AMBIENT TEMPERATURE C( ) A t , PULSE WIDTH Figure 3. Capacitance versus Breakdown Voltage Figure 4. Steady State Power Derating 10,000 MEASURED ZERO BIAS 3/8 1000 3/8 5 MEASURED V RWM 4 100 3 2 1 10 0 11 01 00 1000 0 25 50 75 1001 25 1501 75 200 V , BREAKDOWN VOLTAGE (VOLTS) BR T , LEAD TEMPERATURE (C) L 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17 C, CAPACITANCE (pF) P , PEAK POWER (kW) PK PEAK PULSE DERATING IN % OF P , STEADY STATE POWER DISSIPATION (WATTS) PEAK POWER OR CURRENT T = 25C D A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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