Product Information

1PMT33AT1G

1PMT33AT1G electronic component of ON Semiconductor

Datasheet
ESD Suppressor TVS 33V 2-Pin(1+Tab) Power Mite T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.348 ea
Line Total: USD 1044

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3000
Multiples : 3000

Stock Image

1PMT33AT1G
ON Semiconductor

3000 : USD 0.348
6000 : USD 0.3433
12000 : USD 0.3386

     
Manufacturer
Product Category
Working Voltage
Clamping Voltage
Package / Case
Packaging
Operating Temperature Min Deg C
Suppressor Type
Leakage Current
Esd Protection Voltage
Product Length Mm
Mounting Style
Operating Temperature Max Deg C
Direction Type
Product Depth Mm
Pin Count
Rad Hardened
Configuration
Product Height Mm
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1PMT5.0AT1G/T3G Series Zener Transient Voltage Suppressor POWERMITE Package The 1PMT5.0AT1G/T3G Series is designed to protect voltage sensitive components from high voltage, high energy transients. 1PMT5.0AT1G/T3G Series MAXIMUM RATINGS Rating Symbol Value Unit Maximum P Dissipation, (PW10/1000 s) (Note 1) (1PMT5.0A 1PMT36A) P 200 W pk pk Maximum P Dissipation, (PW10/1000 s) (Note 1) (1PMT40A 1PMT58A) P 175 W pk pk Maximum P Dissipation, (PW8/20 s) (Note 1) P 1000 W pk pk DC Power Dissipation @ T = 25C (Note 2) P 500 mW A D Derate above 25C 4.0 mW/C Thermal Resistance, JunctiontoAmbient R 248 C/W JA Thermal Resistance, JunctiontoLead (Anode) R 35 C/W  Janode Maximum DC Power Dissipation (Note 3) P 3.2 W D Thermal Resistance, JunctiontoTab (Cathode) R 23 C/W Jcathode Operating and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse at T = 25C. A 2. Mounted with recommended minimum pad size, DC board FR4. 3. At Tab (Cathode) temperature, T = 75C tab ELECTRICAL CHARACTERISTICS (T = 25C unless A I otherwise noted, V = 3.5 V Max. @ I (Note 4) = 35 A) F F I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage @ I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current @ V I R RWM T V Breakdown Voltage @ I BR T I Test Current T I Forward Current F I PP V Forward Voltage @ I F F UniDirectional TVS

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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