Product Information

1SMB22CAT3G

1SMB22CAT3G electronic component of ON Semiconductor

Datasheet
TVS Diodes - Transient Voltage Suppressors 22V 600W Bidirectional

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

Stock Image

1SMB22CAT3G
ON Semiconductor

2500 : USD 0.1426
7500 : USD 0.1388
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

1SMB22CAT3G
ON Semiconductor

1 : USD 1.1816
10 : USD 0.9692
100 : USD 0.2631
500 : USD 0.2003
1000 : USD 0.156
2500 : USD 0.1455
5000 : USD 0.1362
10000 : USD 0.1292
25000 : USD 0.1269
N/A

Obsolete
0 - WHS 3

MOQ : 5000
Multiples : 2500

Stock Image

1SMB22CAT3G
ON Semiconductor

5000 : USD 0.138
10000 : USD 0.1309
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Dimensions
Brand
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
LoadingGif

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TVS Diodes Surface Mount > 600W > 1SMB10CAT3G Series Pb 1SMB10CAT3G Series Description The 1SMB10CAT3Gv series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The 1SMB10CAT3G series is supplied in the Littelfuse exclusive, cost-effective, highly reliable package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features Working Peak Reverse Voltage Range 10 V to 75 V Maximum Ratings and Thermal Characteristics Standard Zener Breakdown Voltage Range 11.7 V to 91.7 V Parameter Symbol Value Unit Peak Power 600 Watts 1 ms Peak Power Dissipation (Note 1) T = L P 600 W PK 25C, Pulse Width = 1 ms ESD Rating of Class 3 (> 16 kV) per Human Body Model Maximum Clamp Voltage Peak Pulse Current DC Power Dissipation TL = 75C PD W 3.0 Measured Zero Lead Length (Note 2) Low Leakage < 5 A Above 10 V Derate Above 75C 40 mW/C UL 497B for Isolated Loop Circuit Protection Thermal Resistance from Junction RJL 25 C/W toLead Bi-directional Response Time is Typically < 1 ns PbFree Packages are Available 0.55 W DC Power Dissipation (Note 3) TA = P D 25C Derate Above 25C 4.4 mW/C Thermal Resistance from Junctionto Functional Diagram 226 C/W Ambient R JA Cathode Anode Operating and Storage -65 to T T C J, stg Temperature Range +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is Additional Information not implied. Extended exposure to stresses above the Recommended Operating Conditions Uni-directional may affect device reliability. 1. 10 X 1000 s, nonrepetitive 2. 1 square copper pad, FR4 board 3. FR4 board, using Littelfuse minimum recommended footprint, as shown in 403A-03 case outline dimensions spec Datasheet Resources Samples *Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 11/17/17TVS Diodes Surface Mount > 600W > 1SMB10CAT3G Series I-V Curve Characteristics (T = 25C unless otherwise noted) A Symbol Parameter I PP I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP I V Working Peak Reverse Voltage T RWM V V V I C BR RWM R I Maximum Reverse Leakage Current V I V V V R RWM R RWM BR C I T V Breakdown Voltage I BR T I Test Current T I PP 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 11/17/17

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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