2N5459 ON Semiconductor

2N5459 electronic component of ON Semiconductor
2N5459 ON Semiconductor
2N5459 JFETs
2N5459  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of 2N5459 JFETs across the USA, India, Europe, Australia, and various other global locations. 2N5459 JFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFETs, ensuring timely deliveries around the world.

Part No.2N5459
Manufacturer:ON Semiconductor
Category:JFETs
Description:JFET N-CH 25V 10mA
45V NPN general purpose transistor, suitable for low power amplification.
Datasheet:2N5459 Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.0913
5$ 0.0909
50$ 0.0844
1000$ 0.0714
5000$ 0.0664
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the 2N5459 from our JFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5459 and other electronic components in the JFETs category and beyond.

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The 2N5459 transistor is an N-channel silicon Junction Field-Effect Transistor (JFET) manufactured by ON Semiconductor. This device includes a low-noise amplifier and is known for its low-power operation and low-voltage capabilities. The 2N5459 has a maximum drain current of 2A, a gate-to-source voltage of ±30V, and a drain-to-source voltage of ±60V. It operates in an ambient temperature range from –55 to 175°C and its maximum power dissipation is 100mW. This transistor is commonly used in applications that require low-noise amplifiers, such as medical imaging and audio processing.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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