2N5459 ON Semiconductor

2N5459 electronic component of ON Semiconductor
2N5459 ON Semiconductor
2N5459 JFET
2N5459  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N5459 JFET across the USA, India, Europe, Australia, and various other global locations. 2N5459 JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

Part No. 2N5459
Manufacturer: ON Semiconductor
Category: JFET
Description: JFET N-CH 25V 10mA
45V NPN general purpose transistor, suitable for low power amplification.
Datasheet: 2N5459 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.0821
5$ 0.0818
50$ 0.076
1000$ 0.0642
5000$ 0.0598
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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We are delighted to provide the 2N5459 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5459 and other electronic components in the JFET category and beyond.

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The 2N5459 transistor is an N-channel silicon Junction Field-Effect Transistor (JFET) manufactured by ON Semiconductor. This device includes a low-noise amplifier and is known for its low-power operation and low-voltage capabilities. The 2N5459 has a maximum drain current of 2A, a gate-to-source voltage of ±30V, and a drain-to-source voltage of ±60V. It operates in an ambient temperature range from –55 to 175°C and its maximum power dissipation is 100mW. This transistor is commonly used in applications that require low-noise amplifiers, such as medical imaging and audio processing.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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