PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic mediumpower complementary silicon transistors are designed for generalpurpose amplifier and lowspeed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain h = 2500 (Typ) I = 4.0 Adc FE C 60 100 VOLTS, 75 WATTS CollectorEmitter Sustaining Voltage 100 mAdc V = 60 Vdc (Min) 2N6040, 2N6043 CEO(sus) = 100 Vdc (Min) 2N6042, 2N6045 Low CollectorEmitter Saturation Voltage V = 2.0 Vdc (Max) I = 4.0 Adc 2N6043,44 CE(sat) C = 2.0 Vdc (Max) I = 3.0 Adc 2N6042, 2N6045 C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Epoxy Meets UL 94 V0 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V TO220 These Devices are PbFree and are RoHS Compliant* CASE 221A STYLE 1 MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage 2N6040 V 60 Vdc CEO 2N6043 2N6042 100 2N6045 CollectorBase Voltage 2N6040 V 60 Vdc CB 2N6043 2N6042 100 2N604xG 2N6045 AYWW EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 8.0 Adc C Peak 16 Base Current I 120 mAdc B Total Power Dissipation T = 25C P 75 W 2N604x = Device Code C D Derate above 25C 0.60 W/C x = 0, 2, 3, or 5 A = Assembly Location Operating and Storage Junction T , T 65 to +150 C J stg Y = Year Temperature Range WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 10 2N6040/DPNP 2N6040, 2N6042, NPN 2N6043, 2N6045 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase 1.67 C/W JC Thermal Resistance, JunctiontoAmbient 57 C/W JA *ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) 2N6040, 2N6043 C B 60 2N6042, 2N6045 100 Collector Cutoff Current I A CEO (V = 60 Vdc, I = 0) 2N6040, 2N6043 CE B 20 (V = 100 Vdc, I = 0) 2N6042, 2N6045 CE B 20 Collector Cutoff Current I A CEX (V = 60 Vdc, V = 1.5 Vdc) 2N6040, 2N6043 CE BE(off) 20 (V = 100 Vdc, V = 1.5 Vdc) 2N6042, 2N6045 CE BE(off) 20 (V = 60 Vdc, V = 1.5 Vdc, T = 150C) 2N6040, 2N6043 CE BE(off) C 200 (V = 80 Vdc, V = 1.5 Vdc, T = 150C) 2N6041, 2N6044 CE BE(off) C 200 (V = 100 Vdc, V = 1.5 Vdc, T = 150C) 2N6042, 2N6045 CE BE(off) C 200 Collector Cutoff Current I A CBO (V = 60 Vdc, I = 0) 2N6040, 2N6043 20 CB E (V = 100 Vdc, I = 0) 2N6042, 2N6045 CB E 20 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS DC Current Gain h FE (I = 4.0 Adc, V = 4.0 Vdc) 2N6040, 2N6043, C CE 1000 20.000 (I = 3.0 Adc, V = 4.0 Vdc) 2N6042, 2N6045 C CE 1000 20,000 (I = 8.0 Adc, V = 4.0 Vdc) All Types C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 Adc, I = 16 mAdc) 2N6040, 2N6043, C B 2.0 (I = 3.0 Adc, I = 12 mAdc) 2N6042, 2N6045 C B 2.0 (I = 8.0 Adc, I = 80 Adc) All Types C B 4.0 BaseEmitter Saturation Voltage (I = 8.0 Adc, I = 80 mAdc) V 4.5 Vdc C B BE(sat) BaseEmitter On Voltage (I = 4.0 Adc, V = 4.0 Vdc) V 2.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Small Signal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 MHz) h 4.0 C CE fe Output Capacitance 2N6040/2N6042 C 300 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N6043/2N6045 200 CB E SmallSignal Current Gain (I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 kHz) h 300 C CE fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data.