2N6507 ON Semiconductor

2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for halfwave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. 2N6504 Series MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit *Peak Repetitive Off-State Voltage (Note 1) V V DRM, (Gate Open, Sine Wave 50 to 60 Hz, T = 25 to 125C) V J RRM 2N6504 50 2N6505 100 2N6507 400 2N6508 600 2N6509 800 OnState Current RMS (180 Conduction Angles T = 85C) I 25 A C T(RMS) Average OnState Current (180 Conduction Angles T = 85C) I 16 A C T(AV) Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T = 100C) I 250 A J TSM Forward Peak Gate Power (Pulse Width 1.0 s, T = 85C) P 20 W GM C Forward Average Gate Power (t = 8.3 ms, T = 85C) P 0.5 W C G(AV) I 2.0 A Forward Peak Gate Current (Pulse Width 1.0 s, T = 85C) C GM Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate DRM RRM voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction-to-Case R 1.5 C/W JC *Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current I , DRM (V = Rated V or V , Gate Open) T = 25C I - - 10 A AK DRM RRM J RRM T = 125C - - 2.0 mA J ON CHARACTERISTICS * Forward On-State Voltage (Note 2) (I = 50 A) V - - 1.8 V TM TM * Gate Trigger Current (Continuous dc) T = 25C I - 9.0 30 mA C GT (V = 12 Vdc, R = 100 )T = -40C - - 75 AK L C * Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 , T = -40C) V - 1.0 1.5 V AK L C GT V 0.2 - - V Gate NonTrigger Voltage (V = 12 Vdc, R = 100 , T = 125C) AK L J GD * Holding Current T = 25C I - 18 40 mA C H (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) T = -40C - - 80 AK C * TurnOn Time (I = 25 A, I = 50 mAdc) t - 1.5 2.0 s TM GT gt TurnOff Time (V = rated voltage) t s DRM q (I = 25 A, I = 25 A) - 15 - TM R (I = 25 A, I = 25 A, T = 125C) - 35 - TM R J DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage (Gate Open, Rated V , Exponential Waveform) dv/dt - 50 - V/ s DRM *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.