The 2N6507TG is an NPN general purpose bipolar junction transistor (BJT) made byON Semiconductor. It is a medium power transistor capable of continuous currents up to 1.5 A and peak currents of up to 4 A. It uses a TO-92 package, making it suitable for a variety of applications. The device is also equipped with a slightly integrated length guide in order to facilitate contact with the housing during automated soldering processes. It can be used for a variety of purposes such as signal switching, switching applications, audio amplifier input stages, power management, automatic voltage regulation, and much more. This part has a maximum operating temperature of 150°C, a maximum collector dissipation of 0.5W, a maximum collector to emitter voltage of 30V, and a maximum integral gain of 1000.