LOT No. RANK LOT No. Ordering number : EN8158C 2SK3666 N-Channel JFET 2SK3666 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Voltage V I =--10mA, V =0V --30 V (BR)GDS G DS Gate Cutoff Current I V =--20V, V =0V --1.0 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA --0.18 --0.95 --2.2 V GS DS D Drain Current I V =10V, V =0V 0.6* 3.0* mA DSS DS GS Forward Transfer Admittance yfs V =10V, V =0V, f=1kHz 3.0 6.5 mS DS GS Input Capacitance Ciss V =10V, V =0V, f=1MHz 4 pF DS GS Reverse Transfer Capacitance Crss V =10V, V =0V, f=1MHz 1.1 pF DS GS Static Drain-to-Source On-State Resistance R (on) V =10mV, V =10V 200 W DS DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * : The 2SK3666 is classified by I as follows : (unit : mA) DSS Rank 2 3 I 0.6 to 1.5 1.2 to 3.0 DSS Ordering Information Device Package Shipping memo 2SK3666-2-TB-E CP 3,000pcs./reel Pb Free 2SK3666-3-TB-E CP 3,000pcs./reel I -- V I -- V D DS D DS 5.0 5 4.0 4 V =0V GS V =0V 3.0 GS 3 2.0 2 1.0 1 0 0 01.0 2.03.0 4.05.0 05 10 15 20 25 30 Drain-to-Source Voltage, V -- V ITR00633 Drain-to-Source Voltage, V -- V ITR00634 DS DS I -- V I -- V D GS D GS 8 5 V =10V V =10V DS DS 4 6 3 4 2 2 1 0 0 --1.50 --1.25 --1.00 --0.75 --0.50 --0.25 0 --1.2---1.0 -0.8 --0.6--0.4 --0.20 HD00635 ITR00636 Gate-to-Source Voltage, V -- V Gate-to-Source Voltage, V -- V GS GS No.8158-2/4 --0.1V --0.1V --0.2V --0.2V --0.3V --0.3V --0.4V --0.4V 1.0mA 75C 3.0mA 25C Ta=--25C Drain Current, I -- mA D Drain Current, I -- mA D Drain Current, I -- mA D Drain Current, I -- mA D