2SK596S JFET www.onsemi.com 20V, 150 to 350 A, 1.0mS, N-Channel Features Low output noise voltage : V =--110dB max (V =4.5V, R =1kW, Cin=15pF, V =0V, A curve) NO CC L IN Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET process Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V --20 V GDO Gate Current I 10 mA G Drain Current I 1 mA D Allowable Power Dissipation P 100 mW D Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Product & Package Information Package Dimensions Package : SPA unit : mm (typ) 7524-005 JEITA, JEDEC : SC-72 Minimum Packing Quantity : 500 pcs./bag 4.0 2.2 2SK596S-B 2SK596S-C Marking Electrical Connection 3 596S 0.4 LOT No. 0.5 2 0.4 0.4 1 12 3 1.3 1.3 1 : Source 2 : Gate 3 : Drain 3.0 3.8 SPA ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 Publication Order Number : 1 October 2014 - Rev. 1 2SK596S/D 0.7 0.6 1.8 0.7 15.0 3.0 Rank--0.3V --0.2V --0.1V --0.3V --0.4V --0.4V 2SK596S Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit Rank min typ max Gate-to-Drain Breakdown Voltage V I =--100A --20 V (BR)GDO G Cutoff Voltage V (off) V =5V, I =1A --0.5 --1.0 V GS DS D B 150 240 Drain Current I * V =5V, V =0V A DSS DS GS C 210 350 Forward Transfer Admittance yfs V =5V, V =0V, f=1kHz 0.4 1.0 mS DS GS Input Capacitance Ciss V =5V, V =0V, f=1MHz 4.1 pF DS GS Reverse Transfer Capacitance Crss V =5V, V =0V, f=1MHz 0.88 pF DS GS Ta=25C, V =4.5V, R =1kW, Cin=15pF, See specified Test Circuit. CC L Voltage Gain G V =10mV, f=1kHz --3.0 dB V IN Reduced Voltage Characteristic DG V =10mV, f=1kHz, V =4.5V 1.5V --1.0 --3.5 dB VV IN CC Frequency Characteristic DGvf f=1kHz 110Hz --1.0 dB Total Harmonic Distortion THD V =30mV, f=1kHz 1.2 % IN Output Noise Voltage V V =0V, A curve --110 dB NO IN * : The 2SK596S is classified by I as follows : (unit : A) DSS Rank B C I 150 to 240 210 to 350 DSS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Test Circuit Voltage Gain Frequency Characteristic Harmonic Distortion Reduced Voltage Characteristic 1kW V =4.5V CC V =1.5V CC 15pF 33F + VTVM V THD OSC ODERING INFORMATON Device Package Shipping memo 2SK596S-B SPA 500pcs./bag Pb-Free 2SK596S-C SPA 500pcs./bag I -- V I -- V D DS D DS 500 500 400 400 300 300 200 200 --0.1V 100 100 --0.5V --0.5V 0 0 01 23 45 67 89 10 01 23 45 Drain-to-Source Voltage, V -- V HD02310 Drain-to-Source Voltage, V -- V HD03015 DS DS www.onsemi.com 2 --0.2V V =0V GS V =0V GS Drain Current, I -- A D Drain Current, I -- A D