Ordering number : ENA1543A ATP602 N-Channel Power MOSFET ATP602 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 600 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =480V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 3 5 V GS DS D Forward Transfer Admittance yfs V =10V, I =2.5A 1.5 2.9 S DS D Static Drain-to-Source On-State Resistance R (on) I =2.5A, V =10V 2.1 2.7 DS D GS Input Capacitance Ciss 350 pF Output Capacitance Coss V =30V, f=1MHz 68 pF DS Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time t (on) 14.2 ns d Rise Time t 37.4 ns r See Fig.2 Turn-OFF Delay Time t(off) 36.2ns d Fall Time t 20.4 ns f Total Gate Charge Qg 13.6 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =5A 3.4 nC DS GS D Gate-to-Drain Miller Charge Qgd 7.2 nC Diode Forward Voltage V I =5A, V =0V 0.9 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =200V DD IN 10V L 0V I =2.5A D 50 R =80 L RG V OUT V IN D ATP602 PW=10s 10V D.C.0.5% 50 V DD G 0V S P.G R =50 ATP602 GS Ordering Information Device Package Shipping memo ATP602-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1543-2/7