BC516 PNP Darlington Transistor August 2015 BC516 PNP Darlington Transistor Features This device is designed for applications reguiring extremely high current gain at currents to 1 A. Sourced from process 61. 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number Top Mark Package Packing Method BC516 D27Z BC516 TO-92 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage -30 V CEO V Collector-Base Voltage -40 V CBO V Emitter-Base Voltage -10 V EBO I Collector Current - Continuous -1 A C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC516 Rev. 1.2BC516 PNP Darlington Transistor (1) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Max. Unit P Total Device Dissipation, T = 25C 625 mW D A R Thermal Resistance, Junction-to-Ambient 200 C/W JA R Thermal Resistance, Junction-to-Case 83.3 C/W JC Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. (2) Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Typ. Max. Unit V Collector-Emitter Breakdown Voltage I = -2 mA, I = 0 -30 V CEO C B V Collector-Base Breakdown Voltage I = -100 A, I = 0 -40 V CBO C E V Emitter-Base Breakdown Voltage I = -10 A, I = 0 -10 V EBO E C I Collector Cut-Off Current V = -30 V, I = 0 -100 nA CBO CB E h DC Current Gain I = -20 mA, V = -2 V 30,000 FE C CE V (sat) Collector-Emitter Saturation Voltage I = -100 mA, I = -0.1 mA -1 V CE C B V (on) Base-Emitter On Voltage I = -10 mA, V = -5 V -1.4 V BE C CE I = -10 mA, V = -5 V, (3) C CE f Current Gain - Bandwidth Product 200 MHz T f = 100 MHz Notes: 2. Pulse test: pulse width 2.0% 3. f = Ih I f T fe test 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC516 Rev. 1.2 2