BD436G, BD438G, BD440G, BD442G Plastic Medium Power Silicon PNP Transistor This series of plastic, mediumpower silicon PNP transistors can be used for for amplifier and switching applications. Complementary BD436G, BD438G, BD440G, BD442G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 100 mA, I = 0) C B BD436G 32 BD438G 45 BD440G 60 BD442G 80 CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 A, I = 0) C B BD436G 32 BD438G 45 BD440G 60 BD442G 80 EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 100 A, I = 0) 5.0 E C Collector Cutoff Current I mAdc CBO (V = 32 V, I = 0) CB E BD436G 0.1 (V = 45 V, I = 0) CB E BD438G 0.1 (V = 60 V, I = 0) CB E BD440G 0.1 (V = 80 V, I = 0) CB E BD442G 0.1 Emitter Cutoff Current I mAdc EBO (V = 5.0 V) 1.0 EB DC Current Gain h FE (I = 10 mA, V = 5.0 V) C CE BD436G 40 BD438G 30 BD440G 20 BD442G 15 DC Current Gain h FE (I = 500 mA, V = 1.0 V) C CE BD436G 85 475 BD438G 85 475 BD440G 40 475 BD442G 40 475 DC Current Gain h FE (I = 2.0 A, V = 1.0 V) C CE BD436G 50 BD438G 40 BD440G 25 BD442G 15 Collector Saturation Voltage V Vdc CE(sat) (I = 2.0 A, I = 0.2 A) C B BD436G 0.5 (I = 3.0 A, I = 0.3 A) C B BD438G 0.7 BD440G 0.8 BD442G 0.8 BaseEmitter On Voltage V Vdc BE(ON) (I = 2.0 A, V = 1.0 V) C CE BD436G/BD438G 1.1 BD440G/BD442G 1.5 CurrentGain Bandwidth Product f MHz T (V = 1.0 V, I = 250 mA, f = 1.0 MHz) 3.0 CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.