BD681G ON Semiconductor

BD681G electronic component of ON Semiconductor
BD681G ON Semiconductor
BD681G Darlington Transistors
BD681G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BD681G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BD681G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Part No. BD681G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 4A 100V Bipolar Power NPN
Datasheet: BD681G Datasheet (PDF)
Price (USD)
67: USD 1.0079 ea
Line Total: USD 67.53 
Availability : 2085
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
67$ 1.0079
250$ 0.5079
1000$ 0.4964
2500$ 0.4756
5000$ 0.4733
7500$ 0.4709
10000$ 0.4685
15000$ 0.4661

Availability 2085
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 67
Multiples : 50
QtyUnit Price
67$ 1.0079
250$ 0.5079
1000$ 0.4964
2500$ 0.4756
5000$ 0.4733
7500$ 0.4709
10000$ 0.4685
15000$ 0.4661


Availability 960
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.862
10$ 1.106
23$ 0.8386
63$ 0.7938
100$ 0.763


Availability 26
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4766
10$ 1.231
30$ 0.8312
100$ 0.6652
500$ 0.6161
1000$ 0.5898


Availability 2085
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 250
Multiples : 50
QtyUnit Price
250$ 1.1419
450$ 0.6214
1000$ 0.584


Availability 1453
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 258
Multiples : 1
QtyUnit Price
258$ 1.0081

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BD681G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD681G and other electronic components in the Darlington Transistors category and beyond.

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BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) BV Vdc CEO (I = 50 mAdc, I = 0) C B BD675G, BD675AG 45 BD677G, BD677AG 60 BD679G, BD679AG 80 BD681G 100 Collector Cutoff Current I Adc CEO (V = Half Rated V , I = 0) 500 CE CEO B Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) 0.2 CB CEO E (V = Rated BV , I = 0, T = 100C) 2.0 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Currert Gain, (Note 1) h FE (I = 1.5 Adc,V = 3.0 Vdc) C CE BD675G, BD677G, BD679G, BD681G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD675AG, BD677AG, BD679AG 750 CollectorEmitter Saturation Voltage, (Note 1) (I = 1.5 Adc, I = 30 mAdc) V Vdc C B CE(sat) BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B BD675AG, BD677AG, BD679AG 2.8 BaseEmitter On Voltage, (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE BD677G, BD679G, BD681G 2.5 (I = 2.0 Adc, V = 3 0 Vdc) C CE BD675AG, BD677AG, BD679AG 2.5 DYNAMIC CHARACTERISTICS Small Signal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 THERMALLY LIMIT at T = 25C 0.5 C SECONDARY BREAKDOWN LIMIT 20 15 0.2 BD675, 675A 10 BD677, 677A T = 25C C 0.1 BD679, 679A 5.0 BD681 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 T , CASE TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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