NPN Small-Signal Darlington Transistor BSP52T1G, BSP52T3G, SBSP52T1G This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp www.onsemi.com drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. MEDIUM POWER Features NPN SILICON The SOT-223 Package can be soldered using wave or reflow. The SURFACE MOUNT formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die DARLINGTON TRANSISTOR Available in 12 mm Tape and Reel Use BSP52T1 to Order the 7 Inch/1000 Unit Reel COLLECTOR 2,4 PNP Complement is BSP62T1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS BASE Compliant 1 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and EMITTER 3 PPAP Capable MAXIMUM RATINGS (T = 25C unless otherwise noted) C MARKING DIAGRAM 4 Rating Symbol Max Unit Collector-Emitter Voltage V 80 V 1 CES 2 AYW 3 Collector-Base Voltage V 90 V CBO AS3 SOT223 Emitter-Base Voltage V 5.0 V EBO CASE 318E Collector Current I 1.0 A STYLE 1 C A = Assembly Location Total Power Dissipation (Note 1) P D Y = Year T = 25C 0.8 W A W = Work Week Derate above 25C 6.4 mW/C AS3 = Specific Device Code Total Power Dissipation (Note 2) P D = PbFree Package T = 25C 1.25 W A (Note: Microdot may be in either location) Derate above 25C 10 mW/C Operating and Storage T , T 65 to 150 C J stg Temperature Range ORDERING INFORMATION THERMAL CHARACTERISTICS Device Package Shipping Characteristic Symbol Value Unit BSP52T1G, SOT223 1000 / Tape & Reel SBSP52T1G (PbFree) Thermal Resistance (Note 1) R 156 C/W JA Junction-to-Ambient BSP52T3G SOT223 4000 / Tape & Reel Thermal Resistance (Note 2) R 100 C/W (PbFree) JA Junction-to-Ambient For information on tape and reel specifications, including part orientation and tape sizes, please Maximum Temperature for Soldering refer to our Tape and Reel Packaging Specifications Purposes T 260 C L Brochure, BRD8011/D. Time in Solder Bath 10 Sec Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. 2 2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm pad. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: July, 2021 Rev. 10 BSP52T1/DBSP52T1G, BSP52T3G, SBSP52T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage V V (BR)CBO (I = 100 A, I = 0) 90 C E Emitter-Base Breakdown Voltage V V (BR)EBO (I = 10 A, I = 0) 5.0 E C Collector-Emitter Cutoff Current I A CES (V = 80 V, V = 0) 10 CE BE Emitter-Base Cutoff Current I A EBO (V = 4.0 V, I = 0) 10 EB C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 150 mA, V = 10 V) 1000 C CE (I = 500 mA, V = 10 V) 2000 C CE Collector-Emitter Saturation Voltage V V CE(sat) (I = 500 mA, I = 0.5 mA) 1.3 C B Base-Emitter Saturation Voltage V V BE(sat) (I = 500 mA, I = 0.5 mA) 1.9 C B SWITCHING CHARACTERISTICS Rise Time t ns r (V = 10 V, I = 150 mA, I = 0.15 mA) 155 CC C B1 Delay Time t ns d (V = 10 V, I = 150 mA, I = 0.15 mA) 205 CC C B1 Storage Time t ns s (V = 10 V, I = 150 mA, I = 0.15 mA, I = 0.15 mA) 420 CC C B1 B2 Fall Time t ns f (V = 10 V, I = 150 mA, I = 0.15 mA, I = 0.15 mA) 365 CC C B1 B2 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2